A device formation method may include printing a chalcogenide glass ink onto a surface to form a chalcogenide glass layer, where the chalcogenide glass ink comprises chalcogenide glass and a fluid medium. The method may further include sintering the chalcogenide glass layer at a first temperature for a first duration. The method may also include annealing the chalcogenide glass layer at a second temperature for a second duration. A device may include a substrate and a printed chalcogenide glass layer on the substrate, where the printed chalcogenide glass layer includes annealed chalcogenide glass, and where the printed chalcogenide glass layer is free from cracks.

Methods of manufacturing a glass-based article comprise: exposing an alkali-aluminosilicate glass-based substrate comprising opposing first and second surfaces defining a substrate thickness (t) to an ion exchange treatment to produce an ion exchanged glass-based substrate; and thereafter cooling the ion exchanged glass-based substrate in an environment having a starting temperature that is less than or equal to 200 C. and then reducing the temperature at a rate of greater than or equal to 3.3 C./minute to form the glass-based article.

A method for making a glass article comprising contacting a first surface of a glass substrate with a laser to produce a plurality of light extraction features having a diameter and a depth, wherein the light extraction features produce a color shift y of extracted light where y<0.01 per 500 mm of length. A glass article as described can comprise a first surface and an opposing second surface, wherein the first surface comprises a plurality of laser induced light extraction features, and wherein the plurality of laser induced light extraction features produces a color shift y<0.01 per 500 mm of length.

One aspect relates to a process for the preparation of a quartz glass body, including providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m.sup.2/g, making a glass melt out of silicon dioxide granulate in an oven and making a quartz glass body out of at least part of the glass melt. The oven has at least a first and a further chamber connected to one another via a passage. The temperature in the first chamber is lower than the temperature in the further chambers. On aspect relates to a quartz glass body which is obtainable by this process. One aspect relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

A glass having a good hydrolytic resistance and alkali resistance is defined by a targeted combination of stoichiometric glasses, including glasses also existing as crystals in the same stoichiometry and whose properties can be assumed as being very similar due to the identical topology of the structural units for glass and crystal, respectively. A process of producing the glasses is also provided.

Synthetic quartz glass substrates are prepared by furnishing a synthetic quartz glass block, coating two opposed surfaces of the glass block with a liquid having a transmittance of at least 99.0%/mm at a birefringence measuring wavelength, measuring a birefringence of the glass block by directing light thereacross, determining a slice thickness on the basis of the birefringence measurement and the dimensions of the substrate, and slicing the glass block at the determined slice thickness.

Chemically toughened glass is provided that has a depth of compressive stress for potassium of at least 4 m and at most 8 m; a compressive stress at a depth of 30 m due to sodium exchange of at most 200 MPa and a minimum amount of at least 90 MPa where the thickness is 0.5 mm, at least 100 MPa where the thickness is 0.55 mm, at least 110 MPa in where the thickness is 0.6 mm, at least 120 MPa where the thickness is 0.7 mm, and at least 140 MPa where the thickness is 1 mm; a ratio of sodium exchange depth, in m, to the thickness, in mm, that is greater than 0.130; and a normalized integral of tensile stress that is a storable tensile stress of at least 20.6 MPa and at most 30 MPa.

A polishing agent for a synthetic quartz glass substrate contains polishing particles and water. The polishing particles contain silica particles as base particles, and composite oxide particles of cerium and at least one rare earth element selected from trivalent rare earth elements other than cerium are supported on surfaces of the base particles. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent having high polishing rate and being capable of sufficiently reducing generation of defects due to polishing.

The present invention relates to glasses having a composition made up of base glasses. The glasses have a good chemical toughenability in combination with an advantageous coefficient of thermal expansion. Owing to their composition and the production process, the homogeneity of the properties of the glasses at their surface is high compared to the bulk glass. Furthermore, the fragility of the glasses is low, so that they can be processed to produce very thin glass articles.

A chemically toughenable or toughened glass has, before chemical toughening, a thickness t of at most 1100 m. The glass comprises the following components: 45-75 mol-% SiO.sub.2; 10-25 mol-% Al.sub.2O.sub.3; >1-11 mol-% Li.sub.2O; 0-15 mol-% P.sub.2O.sub.5; 0-8 mol-% B.sub.2O.sub.3; and 0-5 mol-% TiO.sub.2. The average number of bridging oxygen per polyhedron (BO) calculated as 2*42*(c.sub.mol(O)/(c.sub.mol(Si)+c.sub.mol(Al)+c.sub.mol(B)+c.sub.mol(P)+c.sub.mol(Ti))) is higher than 3.55. Upon chemical toughening, the linear dimension variation in the unit of percentage (V.sub.1) is so low that the overall geometry variation (OGV) calculated as (DoL/t)/V.sub.1 is higher than 0.8. DoL is the total depth of all ion-exchange layers on one side of the glass and DoL is more than 1 m, when the glass is chemically toughened with NaNO.sub.3 only, KNO.sub.3 only or with both KNO.sub.3 and NaNO.sub.3.