C04B37/003

JOINT SURFACE COATINGS FOR CERAMIC COMPONENTS
20170368803 · 2017-12-28 ·

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

Method of manufacturing epitaxy substrate

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

JOINING MATERIAL WITH SILICON CARBIDE PARTICLES AND REACTIVE ADDITIVES

In some examples, a method including forming a layer of a slurry composition between a first ceramic or CMC part and a second ceramic or CMC part. The slurry composition includes a carrier material; and a plurality of solid particles in the carrier material. The plurality of solid particles includes first silicon carbide (SiC) particles defining a first average particle size, second SiC particles defining a second average particles size that is less than the first average particles size, and reactive additive particles. The method includes heating the layer of slurry composition to react the plurality of reactive additive particles to fuse the plurality of first SiC particles and the plurality of second SiC particles together with the reactive additive particles, wherein the fused layer of the slurry composition forms a joint layer that joins the first ceramic or CMC part to the second ceramic or CMC part.

Honeycomb structure and method for producing honeycomb structure

A honeycomb structure including a plurality of porous honeycomb block bodies bound via joining material layers A. Each of the porous honeycomb block bodies includes a plurality of porous honeycomb segments bound via joining material layers B, each of the porous honeycomb segment includes: partition walls that defines a plurality of cells to form flow paths for a fluid, each of cells extending from an inflow end face that is an end face on a fluid inflow side to an outflow end face that is an end face on a fluid outflow side; and an outer peripheral wall located at the outermost periphery. At least a part of the joining material layers A has higher toughness than that of the joining material layers B.

LASER JOINING OF CMC STACKS
20170268344 · 2017-09-21 ·

A method of manufacturing a gas turbine engine component (10) and the component so formed. The method includes: stacking a plurality of CMC layers (16) along a metal core (30) to form a stack of disconnected CMC layers, wherein adjacent edge faces (46) of the layers define a surface (44); additively depositing ceramic material (14) to only selected portions of the surface (44) to bond together at least some of the layers at their respective edge faces; and selecting locations for the depositing of the ceramic material to achieve a predetermined mechanical characteristic of the resulting component.

Electrostatic Chuck For Clamping In High Temperature Semiconductor Processing And Method Of Making Same

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.

Dielectric Ceramic Composition and Ceramic Capacitor Using the Same
20220234958 · 2022-07-28 ·

The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:


[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3

wherein:
A is at least one selected from the alkaline-earth element group of Mg, Ca, Sr, and Ba;
B1 is at least one selected from the group of Ti, Zr, Hf and Sn;
B2 is at least one selected from transition metal elements;
and wherein:
x, y, s, u, v, and w are molar fractions of respective elements, and m is the molar ratio of [(Na.sub.1-xK.sub.x).sub.sA.sub.1-s] and [(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]. They are in the following respective range:
0.93≤m≤1.07;
0.7≤s≤1.0;
0.00≤x≤0.05; 0.00≤y≤0.65;
0.7≤u≤1.0; 0.0≤v≤0.3; 0.001≤w≤0.100;
a first sub-component composes of at least one selected from the rare-earth compound,
wherein the rare-earth element is no more than 10 mol % parts with respect to the main component; and
a second sub-component composes a compound with low melting temperature to assist the ceramic sintering process, said frit, which is Li free and could be at least one selected from fluorides, silicates, borides, and oxides. The content of frit is within the range of 0.01 mol % to 15.00 mol % parts with respect to the main component.

METHOD TO PRODUCE A CERAMIC MATRIX COMPOSITE WITH CONTROLLED SURFACE CHARACTERISTICS
20210395156 · 2021-12-23 · ·

A method to produce a ceramic matrix composite with controlled surface characteristics includes: applying a scrim ply to a surface of a fiber preform, where the fiber preform includes silicon carbide fibers coated with boron nitride; infiltrating the fiber preform and the scrim ply with a slurry, thereby forming an impregnated ply on an impregnated fiber preform; infiltrating the impregnated fiber preform and the impregnated ply with a melt comprising silicon, and then cooling, thereby forming a ceramic matrix composite having a ceramic surface layer thereon, where the ceramic surface layer has a predetermined thickness and is devoid of boron; machining or grit blasting the ceramic surface layer to form an intermediate layer suitable for coating; and depositing an environmental barrier coating on the intermediate layer. Thus, a ceramic matrix composite coated with the environmental barrier coating is formed with the intermediate layer in between.

COMPLIANT INTERLAYER

A brake component is disclosed. In various embodiments, the brake component includes a ceramic matrix composite (CMC) structure including a plurality of nominally dense plies, interleaved with a plurality of interlayers, wherein the plurality of nominally dense plies and the plurality of interlayers are bonded by at least one of a Field Assisted Sintering Technique (FAST), a Spark Plasma Sintering (SPS) process, or a localized heating process. In various embodiments, the brake component is a rotor disk or a stator disk.

Epitaxy substrate and method of manufacturing the same

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90° is between the bevel of the device substrate and the handle substrate.