An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

An improved ceramic material for heat insulation with selection of specific stabilizers and adapted proportions, includes zirconium oxide with 0.2 wt. % to 8.0 wt. % of the base stabilizers: yttrium oxide (Y.sub.2O.sub.3), hafnium oxide (HfO.sub.2), cerium oxide (CeO.sub.2), calcium oxide (CaO), and/or magnesium oxide (MgO), wherein at least yttrium oxide (Y.sub.2O.sub.3) is used, and optionally at least one of the additional stabilizers: 0.2 wt. % to 20 wt. % of erbium oxide (Er.sub.2O.sub.3) and/or ytterbium oxide (Yb.sub.2O.sub.3).

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.

A copper-ceramic composite: includes a ceramic substrate containing alumina and a copper or copper alloy coating on the ceramic substrate. The alumina has a mean grain shape factor R.sub.a(Al.sub.2O.sub.3), defined as the arithmetic mean of the shape factors R of the alumina grains, of at least 0.4.

A polycrystalline super hard construction comprises a body of polycrystalline super hard material and a substrate bonded to the body along an interface. The substrate a first end surface forming the interface, the first end surface comprising a projection extending from the body of the substrate into the body of super hard material towards the cutting face, the body of polycrystalline material extending around the projection. The body of polycrystalline material comprises a first region more thermally stable than a second region, the first region comprising an annular portion located around the projection, the second region extending between and bonding the first region to the substrate. The first region has a thickness from the cutting face along the peripheral side edge to the interface of at least around 3 mm and a portion of the projection has a thickness measured in a plane extending along the longitudinal axis of at least around 3 mm.

The invention relates to a copper-ceramic composite, comprising a ceramic substrate, which contains aluminum oxide, a coating on the ceramic substrate made of copper or a copper alloy, wherein the aluminum oxide has an average grain form factor R.sub.a(Al.sub.2O.sub.3), determined as an arithmetic average value from the form factors of the grains of the aluminum oxide, the copper or the copper alloy has an average grain form factor R.sub.a(Cu), determined as an arithmetic average of the form factors of the grains of the copper or copper alloy, and the average grain form factors of the aluminum oxide and copper or copper alloy meet the following condition: 0.5≤R.sub.a(Al.sub.2O.sub.3)/R.sub.a(Cu)≤2.0.

A method for brazing a first ceramic component and a second metal alloy component, to make a structural or external timepiece element, a zirconia-based ceramic is chosen for the first component and a titanium alloy for the second component, a first recess is made inside the first component, set back from a first surface in a junction area with a second surface of the second component, braze material is deposited on this first surface and inside each recess, the second surface is positioned in alignment with the first surface to form an assembly, this assembly is heated in a controlled atmosphere to above the melting temperature of the braze material, in order to form the braze in the junction area.