The present invention relates to a method for precipitation hardening of a piezoceramic and to a piezoceramic.

The present invention relates to a method for precipitation hardening of a piezoceramic and to a piezoceramic.

The present invention relates to an information storage medium and a method for long-term storage of information.

A knife may include a blade having a first side face and a second side face. The blade may include zirconia as a main component, and include a cutting region including at least a ridge portion between the first side face and the second side face. When a portion including the cutting region in the first side face is referred to as a first cutting face, and a portion including the cutting region in the second side face is referred to as a second cutting face, the proportion of cubic crystals of zirconia in the first cutting face may be larger than the proportion of cubic crystals of zirconia in the second cutting face.

[Object] To provide a method of performing deformation processing on a ceramic at a low temperature in a short time, and an apparatus therefor.

[Solving Means] The method of performing deformation processing on a ceramic according to the present invention includes: a step of heating the ceramic within a temperature range of more than 700 C. and not more than 1400 C.; a step of applying a voltage to the heated ceramic; and a step of applying a stress to the heated ceramic to which the voltage has been applied.

[Object] To provide a method of performing deformation processing on a ceramic at a low temperature in a short time, and an apparatus therefor.

[Solving Means] The method of performing deformation processing on a ceramic according to the present invention includes: a step of heating the ceramic within a temperature range of more than 700 C. and not more than 1400 C.; a step of applying a voltage to the heated ceramic; and a step of applying a stress to the heated ceramic to which the voltage has been applied.

There are provided an oxide sintered material containing an In.sub.2O.sub.3 crystal phase, a Zn.sub.4In.sub.2O.sub.7 crystal phase and a ZnWO.sub.4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500? C. or more and 1000? C. or less for 30 minutes or longer.

There are provided an oxide sintered material containing an In.sub.2O.sub.3 crystal phase, a Zn.sub.4In.sub.2O.sub.7 crystal phase and a ZnWO.sub.4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500? C. or more and 1000? C. or less for 30 minutes or longer.

A method for conditioning a ceramic layer with a thickness of less than 150 m over a substrate is provided. The ceramic layer is cleaned. A region of the ceramic layer is scanned with a pulsed excimer laser beam at a repetition rate of 3-300 Hz.

A method of manufacturing a honeycomb structure, the method including: a circumferential coat layer forming process of applying a circumferential coating material on a circumferential surface of a ceramic honeycomb structure to form a circumferential coat layer, the circumferential coat layer forming process including: a rotating process of matching an axial direction of the honeycomb structure; and an applying process of discharging the circumferential coating material to apply the circumferential coating material on the circumferential surface of the honeycomb structure that rotates, wherein in the applying process, a discharge speed of the circumferential coating material, calculated by Equation (1), discharged from the discharge nozzle is 50 to 120 mm/s, and

Discharge speed V [mm/s]=Supplied amount q [g/s] of circumferential coating material(Density [g/mm.sup.3] of circumferential coating materialArea S [mm.sup.2] of discharge opening)(1).