Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Provided is an organic ligand capable of providing a complex that has a three-dimensional network structure due to rare-earth element ions. Also provided is a coordination polymer which includes this organic ligand, has a new function, and contains rare-earth element ions. Additionally, a process for producing the coordination polymer and a use of the coordination polymer are provided. In particular, provided is a coordination polymer having repeating units of formula (10): ##STR00001##
wherein each of the variable groups is as defined in the specification.

Provided is an organic ligand capable of providing a complex that has a three-dimensional network structure due to rare-earth element ions. Also provided is a coordination polymer which includes this organic ligand, has a new function, and contains rare-earth element ions. Additionally, a process for producing the coordination polymer and a use of the coordination polymer are provided. In particular, provided is a coordination polymer having repeating units of formula (10): ##STR00001##
wherein each of the variable groups is as defined in the specification.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Disclosed is a rare-earth complex polymer including trivalent rare-earth ions and a phosphine oxide bidentate ligand represented by the formula (1). One phosphine oxide bidentate ligand is coordinated to the two rare-earth ions, and crosslinks the same.

##STR00001##

An acetylacetone derivative is useful for capturing a metal element by complexation. A convenient and very versatile synthesis method can be used to synthesize the derivative. The derivative can have the following General Formula:

##STR00001##

The present invention relates to new cerium (IV) complexes. Further, the present invention relates to electronically doped semiconductor materials and an electronic component comprising cerium (IV) complexes. A further object of the invention is the use of the cerium (IV) complexes as electron acceptors, especially as p-dopants and electron transport materials in organic electronic components.

The present invention relates to new cerium (IV) complexes. Further, the present invention relates to electronically doped semiconductor materials and an electronic component comprising cerium (IV) complexes. A further object of the invention is the use of the cerium (IV) complexes as electron acceptors, especially as p-dopants and electron transport materials in organic electronic components.