Provided are electrochemical cells that include a compound having the general formula ##STR00001##
wherein R.sub.1 is moiety associated with a lithium ion, X.sub.1 and X.sub.3 are unsubstituted methylene moieties, X.sub.2 and X.sub.4 are each independently selected from a substituted or unsubstituted methylene moiety, X is a substituted or unsubstituted C.sub.1-C.sub.10 alkylene moiety, arylene moiety or heteroarylene moiety, R.sub.2 is selected from Li, H, an alkyl moiety, or a heteroalkyl moiety, 0<m1, 0n1, and m+n=1.

Provided are electrochemical cells that include a compound having the general formula ##STR00001##
wherein R.sub.1 is moiety associated with a lithium ion, X.sub.1 and X.sub.3 are unsubstituted methylene moieties, X.sub.2 and X.sub.4 are each independently selected from a substituted or unsubstituted methylene moiety, X is a substituted or unsubstituted C.sub.1-C.sub.10 alkylene moiety, arylene moiety or heteroarylene moiety, R.sub.2 is selected from Li, H, an alkyl moiety, or a heteroalkyl moiety, 0<m1, 0n1, and m+n=1.

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

The invention relates to a process for purifying alkanesulfonic acids which comprises the steps of: (a) distilling a melt comprising crude alkanesulfonic acid (1) to completely or partly remove low boilers, wherein the low boilers are drawn off at the top of a distillation column (3) or of a one-stage evaporation apparatus and a material stream (7) comprising alkanesulfonic acid, high boilers and residual low boilers is withdrawn at the bottom of the distillation column (3) or of the one-stage evaporation apparatus, (b) sending the stream (7) comprising alkanesulfonic acid, high boilers and residual low boilers into a melt crystallization (9) as the starting melt to form crystals of the alkanesulfonic acid, of hydrates of the alkanesulfonic acid or of a mixture of both suspended in mother liquor, (c) performing a solid-liquid separation to remove the crystals from the mother liquor, (d) optionally washing the crystals to remove mother liquor adhering to the crystals.

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

Disclosed are surfactants, as well as methods of using thereof in oil and gas operations.

Disclosed are compounds as well as methods of using thereof in oil and gas operations. The compounds described herein can be used in Enhanced Oil Recovery (EOR) formulations to provide aqueous stability and ultra-low interfacial tension region. Accordingly, also provided are aqueous compositions for use in EOR that comprise the compounds described herein.

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.