The present invention provides modified sophorolipids comprising taurine for improved foaming performance. The present invention also provides compositions comprising the modified sophorolipids formulated for cosmetics and personal care products. Further provided are methods for improving skin conditions, enhancing and/or maintaining the oral health, and cleaning, enhancing and/or maintaining heathy hair of a subject.

The present invention provides modified sophorolipids comprising taurine for improved foaming performance. The present invention also provides compositions comprising the modified sophorolipids formulated for cosmetics and personal care products. Further provided are methods for improving skin conditions, enhancing and/or maintaining the oral health, and cleaning, enhancing and/or maintaining heathy hair of a subject.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

The present application relates to a sulfonate-based compound and a method for preparing the same.

The present application relates to a sulfonate-based compound and a method for preparing the same.

The heat resistance of an organic semiconductor device including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer is improved. A heating step is performed after a layer containing an organometallic compound for a mask for an organic semiconductor layer, which is represented by General Formula (G1) below, is provided over the organic semiconductor layer.

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In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer greater than or equal to 1 and less than or equal to 5, and n is the same as the valence of the metal M. Note that when n is greater than or equal to 2, a plurality of Ars may be the same or different and Xs may be the same or different. When Ar represents the substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinated to the metal M.

The heat resistance of an organic semiconductor device including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer is improved. A heating step is performed after a layer containing an organometallic compound for a mask for an organic semiconductor layer, which is represented by General Formula (G1) below, is provided over the organic semiconductor layer.

##STR00001##

In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer greater than or equal to 1 and less than or equal to 5, and n is the same as the valence of the metal M. Note that when n is greater than or equal to 2, a plurality of Ars may be the same or different and Xs may be the same or different. When Ar represents the substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinated to the metal M.

Systems for piezoelectric composite materials are described. Various piezoelectric composite material structures and configurations can be incorporated into piezoelectric panels. Various methods are described to recycle and heal various piezoelectric composite materials.

An alkali metal monohydrogen cyanurate compound of the chemical formula AM(HC.sub.3N.sub.3O.sub.3).Math.nH.sub.2O (specifically such as KLi(HC.sub.3N.sub.3O.sub.3).Math.2H.sub.2O, RbLi(HC.sub.3N.sub.3O.sub.3).Math.2H.sub.2O, RbNa(HC.sub.3N.sub.3O.sub.3).Math.2H.sub.2O) and a nonlinear optical crystal thereof are related to optoelectronic functional materials. Measured using a powder frequency doubling test method, and the powder frequency doubling effect of the nonlinear optical crystal is about 2-3 times that of KH.sub.2PO.sub.4 (KDP). The ultraviolet absorption edge of the nonlinear optical crystal is shorter than 250 nm. The nonlinear optical crystal can achieve the harmonic generator of double, triple, or quadruple frequency for Nd: YAG (=1.064 m). Moreover, the nonlinear optical crystal is of a single crystalline structure, is colorless and transparent, and does not deliquesce in air.