A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Certain disclosed embodiments concern a bioremediation composition comprising microbial cells, at least one co-metabolism substrate to induce selected enzyme production by the microbial cells, and a bead or gel encapsulating the microbial cells, such as bacterial or fungi cells, and the at least one co-metabolism substrate. For certain embodiments, the substrate is a slow release compound, such as an orthosilicate that hydrolyzes to produce an alcohol growth substrate. Embodiments of a method for using the composition to transform contaminants of concern also are disclosed.

The present disclosure relates to a series of tricyclic compounds and the use thereof as receptor agonists of sphingosine-1-phosphate subtype 1 (S1P1), and in particular relates to compounds as shown in formula (I) or pharmaceutically acceptable salts thereof. ##STR00001##

The present disclosure relates to a series of tricyclic compounds and the use thereof as receptor agonists of sphingosine-1-phosphate subtype 1 (S1P1), and in particular relates to compounds as shown in formula (I) or pharmaceutically acceptable salts thereof. ##STR00001##

Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

A method for producing tetraalkoxysilane includes reacting a compound represented by Chemical Formula 1 below with an alkali metal at a molar ratio ranging from 1.0:1.0 to 1.0:1.1 and in the absence of a solvent to produce a basic catalyst represented by Chemical Formula 2 below; and mixing the basic catalyst represented by Chemical Formula 2, silicon metal, and an alcohol represented by Chemical Formula 3 below to produce tetraalkoxysilane: Chemical Formula 1
R.sub.1O(CHR.sub.2CH.sub.2O).sub.n—H, Chemical Formula 2
R.sub.1O(CHR.sub.2CH.sub.2O).sub.n-M, and Chemical Formula 3
R.sub.3OH, where M is alkali metal, R.sub.1 represents a C1-C5 linear hydrocarbon group or a C3-C5 branched hydrocarbon group, R.sub.2 represents H or a C1-C3 linear hydrocarbon group, R.sub.3 represents a C1-C2 alkyl group, and n is an integer of 2-3. Thus, it is possible to increase the proportion of the catalyst in the process, and to minimize production of impurities caused by solvent decomposition.

To provide an organic silicon compound having an average structural formula (1). ##STR00001##
(Z represents a 2 to 20-valent group containing an organosiloxane structure, each R.sup.1 independently represents an alkyl group or an aryl group, each R.sup.2 independently represents an alkyl group or an aryl group, each R.sup.3 independently represents a hydrogen atom, an alkyl group, an alkoxy group, or an O. (oxy radical), each R.sup.4 independently represents a hydrogen atom or an alkyl group, each A.sup.1 independently represents a single bond or an alkylene group free of a hetero atom, each A.sup.2 independently represents a single bond or a divalent linking group containing a hetero atom, m is a number of 1 to 3, p is a number of 1 to 10, q is a number of 1 to 10, and p+q represents a number satisfying from 2 to 20 corresponding to the valency number of Z.)

Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of SiH bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of NR1R2, N(R4)(CH2)nN(R5R6), NC(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.

The present invention particularly relates to synthesizing photo-initiators having poly-oligo-silsesquioxane (POSS) structure and realizing photo-polymerization by using these photo-initiators and simultaneous and in-situ synthesis of Ag nano-particles in polymer matrix comprising POSS structure and obtaining wrinkled surfaces as a result of self-arranging thereof.