Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X ═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Processes for preparing latanoprostene bunod and an intermediate prepared from the process. Also latanoprostene bunod compositions having high-purity latanoprostene bunod.

Siloxanes are prepared by reacting: a compound A with a compound B or a compound A with a compound C or a compound B with a compound C or a compound C alone,
in the presence of a compound D at ≥40° C., wherein compound A is a silane or a siloxane having at least one silicon-bonded hydrogen atom, compound B is a silane or a siloxane having at least one silicon-bonded alkoxy moiety, compound C is a silane or a siloxane having at least one silicon-bonded hydrogen atom and at least one silicon-bonded alkoxy moiety, and compound D is a cationic Si(II) compound.

A substrate with a superhydrophobic coating, wherein the superhydrophobic coating includes a binding layer disposed on the substrate, and a hydrophobic layer disposed on the binding layer, wherein the hydrophobic layer includes perfluoroalkyl-functionalized silica nanoparticles, and a method of fabricating the substrate with the superhydrophobic coating. Various combinations of embodiments of the substrate with the superhydrophobic coating and the method of fabricating thereof are provided.

Example implementations relate to fluid feed holes. For example, a method of forming a fluid feed hole can include forming a via of a threshold size in a plurality of thin films of a fluid ejection die by removing a portion of the plurality of thin films, forming a fluid-attack-resistant material on the plurality of thin films and in the via, planarizing the fluid-attack-resistant material using chemical mechanical planarization (CMP), and forming the fluid feed hole by removing a portion of the planarized fluid-attack-resistant material in the via.

A phenalene-1-one compound, a photosensitizer composition including the phenalene-1-one compound, an article including the phenalene-1-one compound and/or photosensitizer composition and the use thereof.

A bearing assembly is disclosed that includes a first component with a first bearing surface, and a second component with a second bearing surface. A fluid is disposed between the first bearing surface and the second bearing surface supporting the first bearing surface and the second bearing surface in a non-contact rotational relationship. The first bearing surface, or the second bearing surface, or both the first bearing surface and the second bearing surface include a surface layer with solid lubricant 2D nanoparticles in a matrix.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.