The present application relates to materials for use in electronic devices, to processes for preparing the materials, and to electronic devices containing the materials.

Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Proposed is a technology related to the ionization of silicon, and more particularly, to a technology for ionization by organizing silicon using a water-soluble silicate with a tricarboxylic acid or a dicarboxylic acid. This technology enables preparation and use of products containing an organized silicon ion complex in a variety of applications including foods such as water and beverages and medical products, as well as electrochemical applications. In particular, it is expected to treat and prevent various diseases caused by silicon deficiency by providing an organized form of silicon that does not exist as an ion in nature.

A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R.sup.2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R.sup.1 N(R.sup.2)a(SiH.sub.3).sub.2−a (I), where R.sup.1 is an organic polymer, a C-.sub.1-20 hydrocarbyl group or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is C.sub.1-6 hydrocarbyl, R.sup.2 is a C-.sub.1-20 hydrocarbyl group, H, or —SiR.sup.3.sub.3.sup.1, where R.sup.3 is as defined above, subscript a is 0 or 1, provided that R.sup.1 and R.sup.2 may be the same or different except if R.sup.1 is phenyl, R.sup.2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

A green route for preparing a metal organic framework include mixing metal precursor with a ligand precursor to form a solvent-free mixture; adding droplets of water to the mixture; heating the mixture at a first temperature after adding the water; and isolating the metal organic framework material including the metal and the ligand.

A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).

The present invention relates to a transition metal organic framework, comprising: a transition metal oxide having antibacterial or antifungal properties; and an organic compound having at least one hydrophilic functional group, wherein the organic compound is bound to the transition metal oxide to surround the transition metal oxide and the hydrophilic functional group is placed toward the outside of the transition metal organic framework.