An aspect of the present disclosure is a method that includes combining a first organic salt (A.sup.1X.sup.1), a first metal salt (M.sup.1(X.sup.2).sub.2), a second organic salt (A.sup.2X.sup.3), a second metal salt (M.sup.2Cl.sub.2), and a solvent to form a primary solution, where A.sup.1X.sup.1 and M.sup.1(X.sup.2).sub.2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A.sup.2X.sup.3 to M.sup.2Cl.sub.2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A.sup.1 or A.sup.2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

##STR00001## In Chemical Formula 1, L.sub.1 and L.sub.2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R.sub.1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R.sub.2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Provided is a thin-film forming raw material containing a compound represented by the following formula (1):

##STR00001##

in the formula (1), R.sup.1 to R.sup.5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R.sup.2, R.sup.3, and R.sup.4 represents the group containing a fluorine atom.

The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

##STR00001##

To provide a novel photoelectric conversion device that is highly convenient, useful, or reliable. The photoelectric conversion device includes a first electrode, a second electrode, and a first unit. The first unit is located between the first electrode and the second electrode. The first unit contains a first electron-donating material and a first electron-accepting material. The first electron-donating material is a condensed aromatic compound, and the first electron-accepting material has a perylene skeleton and two or more alkyl groups. The alkyl groups each independently have 1 to 13 carbon atoms.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

The present invention relates to a method for the preparation of an N-monofluoroalkyl tropane, a method for the preparation of a trialkyltin tropane, a method for the preparation of an iodinated and/or radioiodinated tropane and the use of the N-monofluoroalkyl tropane as a precursor in the method for the preparation of the trialkyltin tropane and/or the iodinated and/or radioiodinated tropane.