To provide an organic electroluminescent device having high efficiency and high driving stability while having a low driving voltage. The organic electroluminescent device has one or more light-emitting layers between an anode and a cathode opposed to each other, wherein at least one of the light-emitting layers is a light-emitting layer composed of a vapor deposition layer containing a first host, a second host and a light-emitting dopant material; the first host is selected from oligopyridine compounds represented by the general formula (1); and the second host is selected from carbazole compounds having two or more carbazole rings, indolocarbazole compounds having an indolocarbazole ring or compounds having a carbazole ring and an indolocarbazole ring.

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. ##STR00001##
When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Methods of making metal halide perovskites, including methods of making micro crystals of metal halide perovskites. The metal halide perovskites, including the micro crystals, may have a 0D structure. The metal halide perovskites may be a light emitting material.

An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I:

##STR00001##

Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar.sup.0, Ar.sup.1 and A.sup.2 are electron-donating groups. A.sup.0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A.sup.1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C═O, —CN, SO.sub.2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.

A method of producing a mono alkyl tin halide from a poly alkyl tin halide, comprising providing the poly alkyl tin halide, adding a Lewis acid catalyst to the poly alkyl tin halide to create a reaction mixture, heating the reaction mixture, dosing a hydrogen halide into the reaction mixture to convert the poly alkyl tin halide into a raw product containing mono alkyl tin halide.

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): ##STR00001##
where R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R.sup.2 and R.sup.3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z.sup.1 represents an integer of from 1 to 3.

The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:

##STR00001##

where R.sup.1 and R.sup.2 each independently represent an alkyl group having 1 to 5 carbon atoms, R.sup.3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R.sup.1 to R.sup.3 is substituted with a fluorine atom.

A molecular-spin qubit is formed from a coordination complex having a plurality of strong-field ligands bound to a metal-atom center. The ground state has non-zero spin, and the resulting ground-state magnetic sublevels are separated by microwave or millimeter-wave frequencies, even in the absence of an external field. Two of these sublevels may be used as a quantum resource for quantum information processing, quantum communication, quantum memory, sensing, and other applications. Optical pumping to an excited state may be used to spin-polarize the molecular-spin qubit, and to measure its population by detecting photoluminescence. The energy-level structure of the metal-atom center can be modified due to its interaction with the ligands, therefore allowing the molecular-spin qubit to be “chemically tuned” based on the number and type of ligands. Ensembles of these molecular-spin qubits can be controllably deposited on a surface, or otherwise integrated into devices and structures.