The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

Described herein are photoresist compositions comprising a metal structure including an organometallic compound, an organometallic nanoparticle, and/or an organometallic cluster; a C2 to C20 organic densifier including oxygen atoms; and a solvent. Also described herein are methods of using a photoresist composition.

A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed.

##STR00001##

Specific details of Chemical Formula 1 are as defined in the specification.

A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent.

##STR00001##

Specific details of Chemical Formula 1 are as defined in the specification.

A metal-containing onium salt compound suitable for use as a photodegradable base of a resist composition and a resist composition using the metal-containing onium salt compound are provided, the resist composition having excellent sensitivity to ionizing radiation such as extreme ultraviolet (EUV), excellent resolution and focal depth in lithography, and can reduce line width roughness (LWR) in a fine pattern. The onium salt compound including a specific metal is used as the photodegradable base.

A metal-containing onium salt compound suitable for use as a photodegradable base of a resist composition and a resist composition using the metal-containing onium salt compound are provided, the resist composition having excellent sensitivity to ionizing radiation such as extreme ultraviolet (EUV), excellent resolution and focal depth in lithography, and can reduce line width roughness (LWR) in a fine pattern. The onium salt compound including a specific metal is used as the photodegradable base.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.5×10.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

A light-absorbing material contains a compound represented by the composition formula HC(NH.sub.2).sub.2SnI.sub.3 and having a perovskite structure. A solid-state .sup.1H-NMR spectrum, which is obtained by .sup.1H-.sup.14N HMQC measurement in two-dimensional NMR at 25° C., of the compound includes a first peak at 6.9 ppm and a second peak at 7.0 ppm. A peak intensity of the first peak is equal to 80% or more of a peak intensity of the second peak.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.