Disclosed herein are metal-organic frameworks and methods of making and use thereof.

Disclosed are a catalyst component and a catalyst for olefin polymerization, and an olefin polymerization method. The catalyst component comprises magnesium, titanium, a halogen and an internal electron donor, wherein the internal electron donor comprises a monocarboxylic acid ester compound and a diether compound, and the molar ratio of the monocarboxylic acid ester compound to the diether compound is (0.0035-0.7):1. By using the catalyst, a polymer having both a high isotactic index and a high melt flow index can be prepared.

Disclosed are a catalyst component and a catalyst for olefin polymerization, and an olefin polymerization method. The catalyst component comprises magnesium, titanium, a halogen and an internal electron donor, wherein the internal electron donor comprises a monocarboxylic acid ester compound and a diether compound, and the molar ratio of the monocarboxylic acid ester compound to the diether compound is (0.0035-0.7):1. By using the catalyst, a polymer having both a high isotactic index and a high melt flow index can be prepared.

A transition metal compound having a novel structure is disclosed herein. The transition metal compound can have improved structural stability by forming a stable coordination site of a transition metal through controlling a bond angle formed by the amido group of a phenylene bridge, a cyclopentadienyl ring, and a transition metal. The transition metal compound has excellent copolymerization properties and may produce an olefin polymer having a high molecular weight in a ultra low density region.

A transition metal compound having a novel structure is disclosed herein. The transition metal compound can have improved structural stability by forming a stable coordination site of a transition metal through controlling a bond angle formed by the amido group of a phenylene bridge, a cyclopentadienyl ring, and a transition metal. The transition metal compound has excellent copolymerization properties and may produce an olefin polymer having a high molecular weight in a ultra low density region.

The present invention relates to a new family of titanium heterometallic structured metal-organic materials (MOFs) having, among other characteristics, high porosity, stability in an aqueous medium and photocatalytic activity under visible light and UV radiation. The new family of materials has a structural unit that combines tetravalent titanium with multiple combinations of divalent metals with a homogeneous distribution at atomic level in the MOF structure. The invention also relates to methods for obtaining them with high yields, in addition to their uses in the generation of solar fuels, photoactivated degradation, photoreduction of CO.sub.2, heterogeneous catalysis, as a component or part of an electronic component and/or as a porous or photoactive coating for controlling pollutants, inter alia.

The present invention relates to a new family of titanium heterometallic structured metal-organic materials (MOFs) having, among other characteristics, high porosity, stability in an aqueous medium and photocatalytic activity under visible light and UV radiation. The new family of materials has a structural unit that combines tetravalent titanium with multiple combinations of divalent metals with a homogeneous distribution at atomic level in the MOF structure. The invention also relates to methods for obtaining them with high yields, in addition to their uses in the generation of solar fuels, photoactivated degradation, photoreduction of CO.sub.2, heterogeneous catalysis, as a component or part of an electronic component and/or as a porous or photoactive coating for controlling pollutants, inter alia.

Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.