Provided are compounds capable of functioning as a host in an OLED at room temperature, where the compound includes: a chemical group A that includes a first element that is one of D, F, CN, Si, Ge, P, B, or Se; and a chemical group B that includes a second element that is one of D, F, CN, Si, Ge, P, B, or Se; where the first element is different from the second element.

Provided are compounds capable of functioning as a host in an OLED at room temperature, where the compound includes: a chemical group A that includes a first element that is one of D, F, CN, Si, Ge, P, B, or Se; and a chemical group B that includes a second element that is one of D, F, CN, Si, Ge, P, B, or Se; where the first element is different from the second element.

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).

A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).

A Pb-free Sn-halide Perovskite solar cell with improved photoelectric conversion efficiency is provided. A solar cell uses a perovskite compound represented by ABX.sub.3 where A is a cation, B is a metal, and X is a halogen, wherein each of A, B and X may be composed of a plurality of elements, and B includes Sn and Ge.

A Pb-free Sn-halide Perovskite solar cell with improved photoelectric conversion efficiency is provided. A solar cell uses a perovskite compound represented by ABX.sub.3 where A is a cation, B is a metal, and X is a halogen, wherein each of A, B and X may be composed of a plurality of elements, and B includes Sn and Ge.