Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

The invention relates to a method of producing the radiolabeled aryl compound (I) Ar—X, or a salt thereof, wherein X is .sup.211At, .sup.210At, .sup.123I, .sup.124I, .sup.125I, or .sup.131I. The method involves reacting the aryl boronic acid compound (II) Ar—Y, or a salt thereof, wherein Y is a borono group (—B(OH).sub.2) or an ester group thereof, with a radionuclide selected from .sup.211At, .sup.210At, .sup.123I, .sup.124I, .sup.125I and .sup.131I, in the presence of an oxidizing agent selected from an alkali metal iodide, an alkali metal bromide, N-bromosuccinimide, N-chlorosuccinimide and hydrogen peroxide, in water.

Metal-organic frameworks are synthesized from either a high concentration synthesis where reaction solutions comprising increased reagent concentrations, or suspensions of reagents which exceed their solubility limit in the reaction solution in a high solids synthesis. In both approaches, the solubility of reagent is maximized by inclusion of a buffer, fixing a nominal pH of the reaction solution to allow metal-organic framework formation. These methods improve yields and scale up of metal-organic frameworks.

Disclosed herein are embodiments of products comprising 1,2,3-triazolate metal-organic frameworks, including particle, composition, thin film, and device embodiments. Particles made of the 1,2,3-triazolate metal-organic frameworks exhibit unique properties compared to bulk materials, such as reduced polydispersity, increased conductivity, and other properties. Also disclosed herein are embodiments of a method for making particles comprising the 1,2,3-triazolate metal-organic framework and other products comprising the same.

Hydroxycitric acid-metal heterocyclic compounds with covalent characteristics are provided. The subject hydroxycitric acid compounds include monomeric hydroxycitric acid (HCA) compounds having a divalent metal, lactone forms thereof, and dimeric compound forms thereof. The monomeric HCA compound includes a divalent metal (X) bonded via a 5-membered ring to both the carboxylic acid and the hydroxy group of the central C2 carbon of the HCA. In addition, a monovalent metal (Y) can also be bonded to the carboxylic acid of C3 or C1, or to both C1 and C3. The subject dimeric compounds include monomeric HCA compounds linked via a second divalent metal (X) to a carboxylic acid group of each HCA unit at C3 or C1. Also provided are compositions including a monomeric HCA compound and one or more other additional compounds. Methods of alleviating at least one symptom associated with a target disease or condition in a subject are provided.

Compositions and methods for visualizing tissue under illumination with near-infrared radiation, including compounds comprising near-infrared, closed chain, sulfo-cyanine dyes and prostate specific membrane antigen ligands are disclosed.

The present invention relates to an electronic device comprising a hole injection layer and/or a hole transport layer and/or a hole generating layer, wherein at least one of the hole injection layer, the hole transport layer and the hole generating layer comprises a coordination complex comprising at least one electropositive atom M having an electro-negativity value according to Allen of less than 2.4 and at least one ligand L having the following structure:

##STR00001##

wherein R.sup.1 and R.sup.2 are independently selected from the group, consisting of C.sub.1 to C.sub.30 hydrocarbyl groups and C.sub.2 to C.sub.30 heterocyclic groups, wherein R.sup.1 and/or R.sup.2 may optionally be substituted with at least one of CN, F, Cl, Br and I.

Compositions and methods for visualizing tissue under illumination with near-infrared radiation, including compounds comprising near-infrared, closed chain, sulfo-cyanine dyes and prostate specific membrane antigen ligands are disclosed.

Provided herein are examples of metal chelating ligands that have high affinity for manganese. The resultant metal complexes can be used as MRI contrast agents, and can be functionalized with moieties that bind to or cause relaxivity change in the presence of biochemical targets.

A method for converting an N,N-dialkylamide compound into an ester compound includes using a fourth period transition metal complex as a catalyst. The fourth period transition metal complex is obtained by a reaction of a precursor having a fourth period transition metal with a nitrogen-containing compound or a phosphorus-containing compound.