Patent classifications
C07F15/04
Fusing agent including a metal bis(dithiolene) salt
An example of a fusing agent includes a metal bis(dithiolene) salt, a polar aprotic solvent, and a balance of water. An example of a method for making an example of the fusing agent includes adding a metal bis(dithiolene) salt into a liquid vehicle including at least a polar aprotic solvent and water.
Precursors And Processes For The Thermal ALD Of Cobalt Metal Thin Films
A method for depositing a metal layer includes a step of contacting a surface of an electrically conductive substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface on the electrically conductive substrate. The metal-containing compound is a metal diketonate or a structurally similar compound. The modified surface is contacted with a vapor of a reducing agent that is a hydrazine or a hydrazine derivative for a second predetermined pulse time to form a metal-containing film on the surface of the electrically conductive substrate. Characteristically, the metal-containing film includes the metal atom in a zero oxidation state in an amount greater than 80 mole percent.
PHOSPHATE-PROMOTED NICKEL CATALYST FOR HIGH TEMPERATURE OLIGOMERIZATION
An oligomerization catalyst, oligomer products, methods for making and using same. The catalyst can include a supported nickel phosphate compound. The catalyst is stable at oligomerization temperatures of 500° C. or higher and particularly useful for making oligomer products containing C4 to C26 olefins having a boiling point in the range of 170° C. to 360° C.
Triaryl phosphine ligands, preparation method therefor, and use in catalyzing coupling reactions
Triaryl phosphine ligands, as shown in general formulae Ia and Ib, or a mixture thereof, and a preparation method therefor. The invention addresses the deficiencies of biaryl phosphine ligands invented by Buchwald et al. Also provided are a triaryl phosphine coordinated palladium complex, a system composed of triaryl phosphine ligand and a palladium salt or complex, and a use of the triaryl phosphine coordinated palladium complex in catalysing organic reactions, in particular a use in catalysis of coupling reactions involving (pseudo)halogenated aromatic hydrocarbon as substrate.
Triaryl phosphine ligands, preparation method therefor, and use in catalyzing coupling reactions
Triaryl phosphine ligands, as shown in general formulae Ia and Ib, or a mixture thereof, and a preparation method therefor. The invention addresses the deficiencies of biaryl phosphine ligands invented by Buchwald et al. Also provided are a triaryl phosphine coordinated palladium complex, a system composed of triaryl phosphine ligand and a palladium salt or complex, and a use of the triaryl phosphine coordinated palladium complex in catalysing organic reactions, in particular a use in catalysis of coupling reactions involving (pseudo)halogenated aromatic hydrocarbon as substrate.
Homoleptic metal coordination complexes as antifungal agents
Provided herein are homoleptic metal coordination complexes that induce cellular apoptosis and cell cycle arrest in G0/G1 phase in fungus, such as Candida spp. Also disclosed are methods of inhibiting fungal growth and methods of treating fungal infections using the disclosed compounds. The disclosed compounds exhibit anti-Candida activity against fluconazole resistant and sensitive strains of C. albicans at low concentrations.
Crystal form of a dithiolene metal complex
The present invention relates to a new crystal form of bis(diphenylimidazolidinetrithione-κS4, κS5)-, (SP-4-1)-nickel(II), a printing ink formulation for security printing and security documents, comprising the new crystal form of bis(diphenylimidazolidinetrithione-κS4, κS5)-, (SP-4-1)-nickel(II) as well as its use as IR absorber.
Metal bicyclic amidinates
Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.
COMPOUND AND OPTICAL FILM COMPRISING SAME
The present specification relates to a compound represented by Chemical Formula 1, a composition for forming an optical film and an optical film including the same, and a display device including the optical film.
POROUS SCAFFOLDS FOR ELECTROCHEMICALLY-CONTROLLED REVERSIBLE CAPTURE AND RELEASE OF ALKENES
In some embodiments, the present disclosure pertains to a method for capturing alkenes that includes: associating the alkenes with metal-organic frameworks, where the metal-organic frameworks includes one or more metals and one or more ligands coordinated with the one or more metals, and where the metal-organic frameworks are conductive; and oxidizing the metal-organic frameworks, where the oxidizing results in a capturing of the alkenes by the metal-organic frameworks. Additional embodiments of the present disclosure pertain to a system for capturing alkenes that includes: metal-organic frameworks, where the metal-organic frameworks include one or more metals and one or more ligands coordinated with the one or more metals, and where the metal-organic frameworks are conductive; and an alkene feed source associated with the metal-organic frameworks, where the alkene feed source is configured to deliver an alkene feed to the system.