The present invention provides with an electron-accepting compound having a structure of the following formula (1): ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

##STR00001##

The present invention relates to a curable composition comprising: at least one polymer comprising cure sites [polymer (E)], at least one thermoplastic polymer [thermoplastic (P)] different from said polymer (E) and at least one 1,5 enediyne curing agent [agent (C)], and to a blend obtained by dynamic vulcanization of said composition.

The present invention relates to a curable composition comprising: at least one polymer comprising cure sites [polymer (E)], at least one thermoplastic polymer [thermoplastic (P)] different from said polymer (E) and at least one 1,5 enediyne curing agent [agent (C)], and to a blend obtained by dynamic vulcanization of said composition.

A tackifier contains a resin with repeating units of formula I

##STR00001##

wherein R.sup.1 is a linear or branched alkylene group with 1 to 10 carbon atoms and R.sup.2 is a linear or branched, saturated or unsaturated aliphatic hydrocarbon group with up to 20 carbon atoms. The tackifier also contains an amino resin with on average at least two hydroxy or ether groups per molecule.

A tackifier contains a resin with repeating units of formula I

##STR00001##

wherein R.sup.1 is a linear or branched alkylene group with 1 to 10 carbon atoms and R.sup.2 is a linear or branched, saturated or unsaturated aliphatic hydrocarbon group with up to 20 carbon atoms. The tackifier also contains an amino resin with on average at least two hydroxy or ether groups per molecule.

A tackifier contains a resin with repeating units of formula I

##STR00001##

wherein R.sup.1 is a linear or branched alkylene group with 1 to 10 carbon atoms and R.sup.2 is a linear or branched, saturated or unsaturated aliphatic hydrocarbon group with up to 20 carbon atoms. The tackifier also contains an amino resin with on average at least two hydroxy or ether groups per molecule.