A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W.sup.1 represents a polymerizable group-containing group, C.sup.t represents a tertiary carbon atom, R.sup.11 represents an unsaturated hydrocarbon group which may have a substituent, R.sup.12 and R.sup.13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of C.sup.t constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W.sup.2 represents a polymerizable group-containing group, Wa.sup.2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3 ##STR00001##

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

One aspect of this invention is a novel functional polymer having a polydispersity from 1 to about 1.12 comprising at least one reactive moiety, selected from a moiety comprising at least one N-coordinative functional group having at least one lone pair of electrons, a moiety comprising a dialkylsilyl group, or a mixture of both groups, wherein said reactive moiety is present in said functional styrenic polymer either on a repeat unit, on an end group or on both, and said N-coordinative functional group is either a monodentate N-coordinative functional group, a polydendate N-coordinative group or a mixture of thereof, and said monodentate coordinative functional group is an azide moiety (—N.sub.3) or a cyano moiety (—CN). Another aspect of this invention is the use of these novel polymer to selectively deposit a DSA directing layer on a metallic substrate.

The present specification relates to a polymer comprising a unit represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, a coating composition comprising the same, an organic light emitting device formed using the same, and a method for manufacturing an organic light emitting device using the same:

##STR00001##

wherein the variables are described herein.

The present specification relates to a polymer comprising a unit represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, a coating composition comprising the same, an organic light emitting device formed using the same, and a method for manufacturing an organic light emitting device using the same:

##STR00001##

wherein the variables are described herein.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.