The present invention relates to a photocatalytic coating film composition and method for producing thereof. More specifically, it relates to an acidic anti-mould and anti-fungal photocatalytic coating film formed by the decomposition and evaporation of the volatile organic base from the photocatalytic coating composition after the application and the drying on substrate. The photocatalytic coating liquid composition consisting of a strong acidic nature of Nafion with pH<2 as an indispensable binder resin; a volatile organic base to neutralize the acidic binder resin temporarily and photocatalysts to generate strong oxidizing compounds which decompose harmful organic compounds and also to provide protection for the acidic environment by decomposing neutralizing chemicals from outside.

The present invention relates to a photocatalytic coating film composition and method for producing thereof. More specifically, it relates to an acidic anti-mould and anti-fungal photocatalytic coating film formed by the decomposition and evaporation of the volatile organic base from the photocatalytic coating composition after the application and the drying on substrate. The photocatalytic coating liquid composition consisting of a strong acidic nature of Nafion with pH<2 as an indispensable binder resin; a volatile organic base to neutralize the acidic binder resin temporarily and photocatalysts to generate strong oxidizing compounds which decompose harmful organic compounds and also to provide protection for the acidic environment by decomposing neutralizing chemicals from outside.

A coating composition comprises a functionalized epoxy resin and a fluoroalkyl-modified particle, such as activated carbon or silica. The functionalized epoxy resin is a ternary polymer composition comprising one or more epoxy resin moieties linked to a polyethylene backbone through an oxygen atom, fluoroalkyl(poly)propionyl groups being grafted to the polyethylene backbone. The coating compositions have superhydrophobic properties useful for self-cleaning surfaces and bubble release from sensors.

A coating composition comprises a functionalized epoxy resin and a fluoroalkyl-modified particle, such as activated carbon or silica. The functionalized epoxy resin is a ternary polymer composition comprising one or more epoxy resin moieties linked to a polyethylene backbone through an oxygen atom, fluoroalkyl(poly)propionyl groups being grafted to the polyethylene backbone. The coating compositions have superhydrophobic properties useful for self-cleaning surfaces and bubble release from sensors.

A coating composition comprises a functionalized epoxy resin and a fluoroalkyl-modified particle, such as activated carbon or silica. The functionalized epoxy resin is a ternary polymer composition comprising one or more epoxy resin moieties linked to a polyethylene backbone through an oxygen atom, fluoroalkyl(poly)propionyl groups being grafted to the polyethylene backbone. The coating compositions have superhydrophobic properties useful for self-cleaning surfaces and bubble release from sensors.

The present invention relates to the technical field of polymer spectral probes, and particularly to a perchloroethylene derivative and use thereof. The perchloroethylene derivative is prepared by reacting a compound A and a perchloroethylene resin. According to the present invention, the fluorescent polymer can be used as a high-selectivity and high-sensitivity enhanced colorimetric and fluorescent polymer probe for Fe.sup.3+ and Cr.sup.3+ As compared with the organic small molecule spectral probe, the polymer spectral probe has improved mechanical property, film forming property and excellent recyclability, and thus has a strong practicability.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to 510.sup.7 dyne/cm.sup.2 and less than or equal to 510.sup.7 dyne/cm.sup.2.

##STR00001##

The copolymer includes divalent units represented by formula [CF.sup.2-CF.sup.2], divalent units represented by formula: (I), and one or more divalent units independently represented by formula: (II) When Z is hydrogen, the copolymer has an alpha transition temperature of up to 100 ?C. The copolymer has an SO.sub.3Z equivalent weight in a range from 300 to 1400, and a variation of the copolymer in which SO.sub.3Z is replaced with SO.sub.2F has a melt flow index of up to 80 grams per ten minutes measured at a temperature of 265 C. and at a support weight of 5 kg. A catalyst ink or polymer electrolyte membrane including the copolymer are also provided.

##STR00001##

The copolymer includes divalent units represented by formula [CF.sup.2-CF.sup.2], divalent units represented by formula: (I), and one or more divalent units independently represented by formula: (II) When Z is hydrogen, the copolymer has an alpha transition temperature of up to 100 ?C. The copolymer has an SO.sub.3Z equivalent weight in a range from 300 to 1400, and a variation of the copolymer in which SO.sub.3Z is replaced with SO.sub.2F has a melt flow index of up to 80 grams per ten minutes measured at a temperature of 265 C. and at a support weight of 5 kg. A catalyst ink or polymer electrolyte membrane including the copolymer are also provided.