C09D161/18

SURFACE TREATMENT AGENT AND METHOD OF PRODUCING SUBSTRATE HAVING SURFACE-TREATED LAYER
20230416560 · 2023-12-28 · ·

A surface treatment agent includes: a fluorine-containing compound (A) having a reactive silyl group; and at least one compound (B) selected from the group consisting of a fluorine-containing ketone compound (B1): R.sup.1COR.sup.2, a fluorine-containing cyclic ketone compound (the following B2), and a fluorine-containing polyether compound (B3): R.sup.4[OR.sup.5].sub.qR.sup.6. In Formula (B1), R.sup.1 and R.sup.2 represent a fluorine-containing alkyl group having from 1 to 5 carbon atoms. In Formula (B2), R.sup.3 represents a residue that forms a 3- to 5-membered ring structure with a carbon atom of a carbonyl group and that has a fluorine atom. In Formula (B3), R.sup.4 and R.sup.6 represent a fluorine-containing alkyl group having from 1 to 3 carbon atoms, q represents an integer of 1 or more, R.sup.5 represents a perfluoroalkylene group having from 1 to 6 carbon atoms, and in a case in which q is an integer of 2 or more, plural R.sup.5s may be the same or different.

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SURFACE TREATMENT AGENT AND METHOD OF PRODUCING SUBSTRATE HAVING SURFACE-TREATED LAYER
20230416560 · 2023-12-28 · ·

A surface treatment agent includes: a fluorine-containing compound (A) having a reactive silyl group; and at least one compound (B) selected from the group consisting of a fluorine-containing ketone compound (B1): R.sup.1COR.sup.2, a fluorine-containing cyclic ketone compound (the following B2), and a fluorine-containing polyether compound (B3): R.sup.4[OR.sup.5].sub.qR.sup.6. In Formula (B1), R.sup.1 and R.sup.2 represent a fluorine-containing alkyl group having from 1 to 5 carbon atoms. In Formula (B2), R.sup.3 represents a residue that forms a 3- to 5-membered ring structure with a carbon atom of a carbonyl group and that has a fluorine atom. In Formula (B3), R.sup.4 and R.sup.6 represent a fluorine-containing alkyl group having from 1 to 3 carbon atoms, q represents an integer of 1 or more, R.sup.5 represents a perfluoroalkylene group having from 1 to 6 carbon atoms, and in a case in which q is an integer of 2 or more, plural R.sup.5s may be the same or different.

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Composition for forming film protecting against aqueous hydrogen peroxide solution

A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): ##STR00001##
(wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 31+m10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3u+v8; R.sup.1-R.sup.4 are each independently hydrogen atom, hydroxy group, C.sub.1-10 hydrocarbon group, or C.sub.6-20 aryl group; when R.sup.1-R.sup.4 are each the C.sub.1-10 hydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.

Composition for forming film protecting against aqueous hydrogen peroxide solution

A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): ##STR00001##
(wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 31+m10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3u+v8; R.sup.1-R.sup.4 are each independently hydrogen atom, hydroxy group, C.sub.1-10 hydrocarbon group, or C.sub.6-20 aryl group; when R.sup.1-R.sup.4 are each the C.sub.1-10 hydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.

COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER

A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR.sub.1 and AR.sub.2 represent a benzene ring or naphthalene ring optionally with a substituent; W.sub.1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W.sub.1; W.sub.2 represents a divalent organic group having 1 to 80 carbon atoms; R.sub.1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R.sub.2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

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COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER

A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR.sub.1 and AR.sub.2 represent a benzene ring or naphthalene ring optionally with a substituent; W.sub.1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W.sub.1; W.sub.2 represents a divalent organic group having 1 to 80 carbon atoms; R.sub.1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R.sub.2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

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COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING CIRCUIT PATTERN
20200354501 · 2020-11-12 ·

A composition for film formation for lithography of the present invention comprises at least one selected from the group consisting of an aromatic hydrocarbon formaldehyde resin and a modified aromatic hydrocarbon formaldehyde resin, wherein the aromatic hydrocarbon formaldehyde resin is a product of condensation reaction between an aromatic hydrocarbon having a substituted or unsubstituted benzene ring and formaldehyde, and the modified aromatic hydrocarbon formaldehyde resin is formed by modifying the aromatic hydrocarbon formaldehyde resin.

Method for roughening surface using wet treatment

A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.

Method for roughening surface using wet treatment

A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.

COMPOSITION FOR FORMING FILM PROTECTING AGAINST AQUEOUS HYDROGEN PEROXIDE SOLUTION

There is provided a composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c):

##STR00001## (wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 31+m10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3u+v8; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently a hydrogen atom, a hydroxy group, a C.sub.1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C.sub.6-20 aryl group optionally having at least one hydroxy group as a substituent; when R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each the C.sub.1-10 hydrocarbon group, R.sup.1 and R.sup.2 optionally form a benzene ring together with a ring carbon atom to which R.sup.1 and R.sup.2 are bonded, R.sup.3 and R.sup.4 optionally form a benzene ring together with a ring carbon atom to which R.sup.3 and R.sup.4 are bonded, or the benzene ring optionally has at least one hydroxy group as a substituent; and j and k are each independently 0 or 1); a crosslinking agent; a crosslinking catalyst; and a solvent, wherein the amount of the compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to the amount of the resin, and the amount of the crosslinking agent is 5% by mass to 40% by mass relative to the amount of the resin.