Polybenzoxazine comprises repeat units which comprise at least one unit corresponding to the formulae (I) or (II): ##STR00001##
in which Z.sub.1 and Z.sub.2, which are identical or different, represent an at least divalent, aliphatic, cycloaliphatic or aromatic bonding group comprising at least one carbon atom and optionally at least one heteroatom selected from O, S, N and P. Such a polybenzoxazine may be used as a metal-adhesive layer, in particular for the adhesive bonding of a metal substrate, in particular made of carbon steel, to a rubber.

There is provided an epoxy composition which has difficulty in precipitating a crystal during storage, is homogeneous and can be stored for a long period; and a cured product of the composition having excellent transparency, heat resistance, and light resistance can be obtained on curing. An α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including β-type tris-(2,3-epoxypropyl)-isocyanurate in the crystal in a ratio of 2% by mass to 15% by mass. A method for producing the α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including step (i) separating β-type tris-(2,3-epoxypropyl)-isocyanurate contained in a tris-(2,3-epoxypropyl)-isocyanurate solution from the solution as a solid to obtain a crystal with an increased content ratio of α-type tris-(2,3-epoxypropyl)-isocyanurate.

There is provided an epoxy composition which has difficulty in precipitating a crystal during storage, is homogeneous and can be stored for a long period; and a cured product of the composition having excellent transparency, heat resistance, and light resistance can be obtained on curing. An α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including β-type tris-(2,3-epoxypropyl)-isocyanurate in the crystal in a ratio of 2% by mass to 15% by mass. A method for producing the α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including step (i) separating β-type tris-(2,3-epoxypropyl)-isocyanurate contained in a tris-(2,3-epoxypropyl)-isocyanurate solution from the solution as a solid to obtain a crystal with an increased content ratio of α-type tris-(2,3-epoxypropyl)-isocyanurate.

A hard-mask forming composition including a resin (P1) having a repeating structure (u1) represented by General Formula (u1-0), wherein Ar.sup.01 and Ar.sup.02 are aromatic hydrocarbon groups which may have a substituent, Ar.sup.02 has at least one nitrogen atom or oxygen atom, L.sup.01 and L.sup.02 are each independently a single-bonded or divalent linking group, and X is NH.sub.4 and the like ##STR00001##

A hard-mask forming composition including a resin (P1) having a repeating structure (u1) represented by General Formula (u1-0), wherein Ar.sup.01 and Ar.sup.02 are aromatic hydrocarbon groups which may have a substituent, Ar.sup.02 has at least one nitrogen atom or oxygen atom, L.sup.01 and L.sup.02 are each independently a single-bonded or divalent linking group, and X is NH.sub.4 and the like ##STR00001##

In a first aspect, a polymer composition includes a first polymer derived from a soluble polymer composition having an imide group and a T.sub.g reducing compound having an amine group. The first polymer has a glass transition temperature that is lower than a second polymer derived from the same soluble polymer composition, but without a T.sub.g reducing compound having an amine group. In a second aspect, a coating solution includes a soluble polymer having an imide group and a T.sub.g reducing compound having an amine moiety that can be an amine or a first masked amine that can be converted to an amine, wherein the first masked amine can be chemically converted, thermally converted, photo-converted or dissociated.

A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.

A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.

For example, a triazine ring-containing polymer containing a repeating unit structure represented by formula (25) below, ##STR00001## wherein R.sup.a represents R.sup.102 or R.sup.103, R.sup.102 represents a fluorine atom or a fluoroalkyl group having 1 to 10 carbon atoms, and R.sup.103 represents a crosslinking group.

For example, a triazine ring-containing polymer containing a repeating unit structure represented by formula (25) below, ##STR00001## wherein R.sup.a represents R.sup.102 or R.sup.103, R.sup.102 represents a fluorine atom or a fluoroalkyl group having 1 to 10 carbon atoms, and R.sup.103 represents a crosslinking group.