Provided is a hydrosilylation reactive composition that has a sufficient pot life at room temperature, that can be cured at low temperature by exposure to high energy radiation, and that produces a stable semi-cured product during the curing process, and to provide a semi-cured product and a cured product obtained using this hydrosilylation reactive composition. The composition comprises: (A) a compound containing at least one aliphatically unsaturated monovalent hydrocarbon group in the molecule; (B) a compound containing at least two hydrogen atoms bonded to silicon atoms in the molecule; (C) a first hydrosilylation catalyst exhibiting activity in the composition without exposure to high energy radiation; and (D) a second hydrosilylation catalyst not exhibiting activity unless exposed to high energy radiation, and exhibiting activity in the composition by exposure to high energy radiation.

Provided is a hydrosilylation reactive composition that has a sufficient pot life at room temperature, that can be cured at low temperature by exposure to high energy radiation, and that produces a stable semi-cured product during the curing process, and to provide a semi-cured product and a cured product obtained using this hydrosilylation reactive composition. The composition comprises: (A) a compound containing at least one aliphatically unsaturated monovalent hydrocarbon group in the molecule; (B) a compound containing at least two hydrogen atoms bonded to silicon atoms in the molecule; (C) a first hydrosilylation catalyst exhibiting activity in the composition without exposure to high energy radiation; and (D) a second hydrosilylation catalyst not exhibiting activity unless exposed to high energy radiation, and exhibiting activity in the composition by exposure to high energy radiation.

A gel is provided which is the condensation reaction product of the following composition: (i) at least one condensation curable silyl terminated polymer having at least one hydrolysable and/or hydroxyl functional group(s) per molecule; (ii) a cross-linker selected from the group of a silicone, an organic polymer, a silane or a disilane molecule which contains at least two hydrolysable groups per molecule; and (iii) a condensation catalyst selected from the group of titanates, zirconates or tin (II). The molar ratio of hydroxyl and/or hydrolysable groups in polymer (i) to hydrolysable groups from component (ii) is between 0.5:1 and 1:1 using a monosilane cross-linker or 0.75:1 to 3:1 using disilanes, and the molar ratio of M-OR or tin (II) functions to the hydroxyl and/or hydrolysable group(s) in polymer (i) is comprised between 0.01:1 and 0.5:1, where M is titanium or zirconium. The composition, and uses for the gel are also disclosed.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

Provided is a coating for forming a conductive release layer capable of forming a conductive release layer having high adhesion to a film base material, suppressing deterioration in conductivity over time in the air, and having a sufficient releasing property. The coating for forming a conductive release layer of the present invention contains a conductive composite including a π-conjugated conductive polymer and a polyanion, an epoxy compound having an epoxy group, a curable silicone, a polyester resin, and an organic solvent.

A provided adhesive is a silicone-based adhesive having an initial adhesive force of 0.2 to 3 N/20 mm and having an adhesive force of 4 N/20 mm or less after heating at 260° C. for 30 minutes. A provided adhesive tape includes a cured layer of the above silicone-based adhesive. The adhesive tape may further include a substrate, and the cured layer may be provided on a surface of the substrate. The adhesive tape shows high adhesion performance and is capable of achieving low thermal dependence. The adhesive is capable of forming the adhesive tape.

A provided adhesive is a silicone-based adhesive having an initial adhesive force of 0.2 to 3 N/20 mm and having an adhesive force of 4 N/20 mm or less after heating at 260° C. for 30 minutes. A provided adhesive tape includes a cured layer of the above silicone-based adhesive. The adhesive tape may further include a substrate, and the cured layer may be provided on a surface of the substrate. The adhesive tape shows high adhesion performance and is capable of achieving low thermal dependence. The adhesive is capable of forming the adhesive tape.

Provided are: a wafer processing temporary adhesive that is for temporarily adhering a wafer to a support and that comprises a thermosetting resin composition containing a non-functional organopolysiloxane; a wafer laminate; and a thin wafer manufacturing method.

Provided are: a wafer processing temporary adhesive that is for temporarily adhering a wafer to a support and that comprises a thermosetting resin composition containing a non-functional organopolysiloxane; a wafer laminate; and a thin wafer manufacturing method.