Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.

An anisotropic conductive film can reduce the conduction resistance of an anisotropic conductively connected connection structure, and can reliably suppress the occurrence of short-circuits. The film has a structure wherein insulating particle-including conductive particles, wherein insulating particles adhere to the surfaces of conductive particles, are distributed throughout an insulating resin layer. In the insulating particle-including conductive particles, a number of insulating particles in contact with the conductive particles with respect to a film thickness direction is lower than with respect to a film planar direction. Preferably, a number of the insulating particles overlapping with the conductive particles when one of a front and rear film surface of the anisotropic conductive film is viewed in plan view is lower than a number of the insulating particles overlapping with the conductive particles when the other of the film surfaces is viewed in plan view.

Barrier adhesive compositions include at least one polyisobutylene-containing polymer and a curable silsesquioxane additive. The curable silsesquioxane additive may contain free radically polymerizable groups. Barrier film articles include the barrier adhesive compositions and a film. The barrier film articles can be used to encapsulate organic electronic devices.

An anisotropic conductive film, capable of connecting a terminal formed on a substrate having a wavy surface such as a ceramic module substrate with conduction characteristics stably maintained, includes an insulating adhesive layer, and conductive particles regularly arranged in the insulating adhesive layer as viewed in a plan view. The conductive particle diameter is 10 μm or more, and the thickness of the film is 1 or more times and 3.5 or less times the conductive particle diameter. The variation range of the conductive particles in the film thickness direction is less than 10% of the conductive particle diameter.

The invention provides a composition for forming an easy-to-detach thin resin film, the composition being characterized by including a urethane (meth)acrylate compound, and a first polymerizable composition containing an ethylenic unsaturated monomer having a tert-butoxy group and a radical polymerization initiator, or a polymer of a second polymerizable composition containing the ethylenic unsaturated monomer having a tert-butoxy group, wherein the amount of the ethylenic unsaturated monomer having a tert-butoxy group is 5 mass % or more and less than 95 mass % with respect to the sum of the amount of the urethane (meth)acrylate compound and the total amount of the monomer(s) contained in the first polymerizable composition or the second polymerizable composition.

A wafer-fixing tape, having: an temporary-adhesive layer provided on a substrate film, wherein the substrate film contains an ionomer resin comprising a terpolymer crosslinked by a metal ion, and wherein an arithmetic average roughness Ra of a surface of the substrate film opposite to the temporary-adhesive layer 5b is from 0.1 to 3.0 μm; a processing method of a semiconductor wafer; and a semiconductor chip.

Subject matter disclosed herein relates to improving a contact diameter of an adhesive/sealing material on surfaces of substrates by altering rheological properties of the adhesive/sealing material. An electrowetting display device comprises a first substrate and a second substrate, a first fluid and a second fluid disposed between the first substrate and the second substrate, wherein the first fluid is immiscible with the second fluid. An adhesive/sealing material comprising UV curable epoxy glue is in contact with the second fluid and couples the second substrate to the first substrate. The adhesive/sealing material further comprises silica particles in a range of 1-6% mass fraction of silica that alter rheological properties of the UV curable epoxy glue.

A mask-integrated surface protective tape, containing: a substrate film; a temporary-adhesive layer provided on the substrate film; and a mask material layer provided on the temporary-adhesive layer; wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer; and wherein the mask-integrated surface protective tape is used for a method of producing a semiconductor chip utilizing a plasma-dicing.

An adhesive composition that contains two polymeric materials, a method of making the adhesive composition, and an article that contains the adhesive composition are provided. One of the polymeric materials is derived from a (meth)acrylate macromer having a poly(tetrahydrofuran) group. The articles include a layer of the adhesive composition positioned next to a substrate. The articles can be, for example, an adhesive tape or can be part of another article such as, for example, an electronic device that is impact resistant and/or flexible.

Disclosed is an adhesive film for circuit connection. This adhesive film for circuit connection includes a first adhesive layer containing conductive particles, a cured product of a photocurable resin component, and a first thermosetting resin component, and a second adhesive layer provided on the first adhesive layer and containing a second thermosetting resin component. A thickness of the first adhesive layer is 5 μm or less.