Patent classifications
C09K11/08
STRUCTURED PHOSPHATE LUMINOPHORES AND STRUCTURED METAL LUMINOPHORES AND THEIR USE IN THE DETECTION OF HYDROPEROXIDES USING CHEMICALLY-STIMULATED LUMINESCENCE
This disclosure relates to inorganic structured metal luminophores for the detection of peroxides and/or free radicals in proximity thereto. The disclosure includes the application of inorganic phosphates or mixtures thereof with one or more metal components that provides a structured metal luminophore capable of providing real-time detection and/or measurement of the presence of peroxides and/or free radicals in an environment proximal to the structured metal luminophore.
Nitride fluorescent material and light-emitting device containing same
The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like M.sub.mAl.sub.xSi.sub.yN.sub.3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.
Method of producing β-sialon fluorescent material
Provided is a method of producing a β-sialon fluorescent material having a high light emission intensity and an excellent light emission luminance. The method includes preparing a calcined product having a composition of β-sialon containing an activating element; grinding the calcined product to obtain a ground product; and heat-treating the ground product to obtain a heat-treated product. A specific surface area of the ground product is 0.2 m.sup.2/g or more.
Light-converting material with semiconductor nanoparticles, process for its preparation, and light source
The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.
Rare-earth halide scintillating material and application thereof
The present invention provides a rare-earth halide scintillating material and application thereof. The rare-earth halide scintillating material has a chemical formula of RE.sub.aCe.sub.bX.sub.3, wherein RE is a rare-earth element La, Gd, Lu or Y, X is one or two of halogens Cl, Br and I, 0≤a≤1.1, 0.01≤b≤1.1, and 1.0001≤a+b≤1.2. By taking a +2 valent rare-earth halide having the same composition as a dopant to replace a heterogeneous alkaline earth metal halide in the prior art for doping, the rare-earth halide scintillating material is relatively short of a halogen ion. The apparent valence state of a rare-earth ion is between +2 and +3. The rare-earth halide scintillating material belongs to non-stoichiometric compounds, but still retains a crystal structure of an original stoichiometric compound, and has more excellent energy resolution and energy response linearity than the stoichiometric compound.
Fabrication method of InP based quantum dot by using aminophosphine type P precursor and core size-sorting procedure
A method for fabricating quantum dots according to the present disclosure includes (a) synthesizing InP cores based on an aminophosphine type phosphorus (P) precursor, (b) size-sorting the InP cores, and (c) forming at least two shells on the size-sorted InP cores. In this instance, the size-sorting includes precipitating the InP cores with an addition of a dispersive solvent and a nondispersive solvent to the InP cores and separating the InP cores using a centrifugal separator, wherein the InP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent.
Method of producing beta-sialon fluorescent material
Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.
Quantum dots, and an electronic device including the same
A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
Semiconductor nanoparticles comprising ZnSTe shell layer
The purpose of the present invention to provide semiconductor nanoparticles substantially containing no Cd, and which have an increased absorption coefficient to blue light while maintaining high stability. Semiconductor nanoparticles having a core containing at least In and P, and a shell having one or more layers, wherein at least one layer of the shell is ZnSeTe (wherein Te/(Se+Te)=0.03 to 0.50); and the semiconductor nanoparticles cause, when the semiconductor nanoparticles are dispersed in a dispersion medium to yield a dispersion liquid with a concentration of 1 mg/mL in inorganic mass, the dispersion liquid to have an absorbance of 0.9 or higher with respect to light having a wavelength of 450 nm at an optical path length of 1 cm.
LIGHT EMITTING DEVICE
A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.