A coated phosphor including: an inorganic phosphor particle; and a silicon oxide coating that coats the inorganic phosphor particle, wherein a molar ratio (O/Si) of an oxygen atom to a silicon atom in the silicon oxide coating through ICP emission spectroscopy of the coated phosphor is 2.60 or less.

An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.

A method for manufacturing a quantum dot layer includes: performing first application of applying, to a position overlapping with a substrate, a first solution including a plurality of particles including a core and a first ligand, a first inorganic precursor, and a first solvent; performing first heating of heating first solution to a first temperature or higher after the performing first application, the first temperature being a higher temperature of a melting point of the first ligand and a boiling point of the first solvent; and performing second heating of heating the first inorganic precursor to a second temperature after the performing first heating, the second temperature being higher than the first temperature and being a temperature, at which the first inorganic precursor epitaxially grows around the core and at which a first shell configured to coat the core is formed to form a plurality of first quantum dots.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.

Provided are an inorganic fluorescent nanoparticle composite that can suppress the degradation of inorganic fluorescent nanoparticles when sealed in glass and a wavelength conversion member using the inorganic fluorescent nanoparticle composite. An inorganic fluorescent nanoparticle composite 1 is made up by including: an inorganic fluorescent nanoparticle 2; and an inorganic fine particle 3 deposited on a surface of the inorganic fluorescent nanoparticle 2.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.