The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significatntly reduce the defects on Oxide surface which has an excellent market application prospect.

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significatntly reduce the defects on Oxide surface which has an excellent market application prospect.

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO.sub.2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-()-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO.sub.2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-()-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

An ordered, 3-dimensional, micro-scale, open-cellular truss structure including interconnected hollow polymer tubes. The hollow micro-truss structure separates two fluid volumes which can be independently pressurized or depressurized to control flow, or materials properties, or both. Applications for this invention include deployable structures, inflatable structures, flow control, and vented padding.

Tungsten (W) chemical mechanical polishing (CMP) compositions and their related methods and systems are disclosed. The compositions comprise iron-ligand complexes or metal-ligand complexes as catalyst to induce the formation of hydroxyl radical to enhance oxidation rates of W film and provide high and tunable W film removal rates. The W chemical mechanical polishing (CMP) compositions can be used in wide pH range, therefore, provide highly tunable W: oxide or barrier layer selectivity. The compositions afford low dishing and low erosion levels.

The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.