The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF.sub.3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF.sub.3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF.sub.3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF.sub.3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

A method for preparing a coplanar waveguide structure includes acquiring a structure to be etched, the structure to be etched including an aluminum film provided on a substrate structure and a photoresist structure provided at an upper end of the aluminum film, wherein the photoresist structure is configured to cover partial areas of the aluminum film; performing a first etching operation on the aluminum film provided on the substrate structure by using an acidic solution to obtain a first etched structure; rinsing the first etched structure to obtain an intermediate structure; performing a second etching operation on the intermediate structure by using an alkaline solution to obtain a second etched structure; and rinsing the second etched structure to obtain a target structure for generating a coplanar waveguide structure, the target structure including the aluminum film and the photoresist structure, wherein the photoresist structure covers all areas of the aluminum film.

The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.