A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.

A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.

According to an embodiment, a housing of an electronic device comprises: a metal frame, wherein a surface of the metal frame has: a gloss value of 1 gloss unit (Gu) to 10 Gu, and a maximum height of a plurality of irregularities disposed on the surface in a range between 0.1 m to 2.3 m, and a maximum depth of valleys between the plurality of irregularities in a range between 0.1 m to 1.8 m, and a number of the plurality of irregularities per unit area of 1 cm.sup.2 in a range between 90 to 200.

According to an embodiment, a housing of an electronic device comprises: a metal frame, wherein a surface of the metal frame has: a gloss value of 1 gloss unit (Gu) to 10 Gu, and a maximum height of a plurality of irregularities disposed on the surface in a range between 0.1 m to 2.3 m, and a maximum depth of valleys between the plurality of irregularities in a range between 0.1 m to 1.8 m, and a number of the plurality of irregularities per unit area of 1 cm.sup.2 in a range between 90 to 200.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

According to an embodiment, a housing of an electronic device comprises: a metal frame, wherein a surface of the metal frame has: a gloss value of 1 gloss unit (Gu) to 10 Gu, and a maximum height of a plurality of irregularities disposed on the surface in a range between 0.1 m to 2.3 m, and a maximum depth of valleys between the plurality of irregularities in a range between 0.1 m to 1.8 m, and a number of the plurality of irregularities per unit area of 1 cm.sup.2 in a range between 90 to 200.

According to an embodiment, a housing of an electronic device comprises: a metal frame, wherein a surface of the metal frame has: a gloss value of 1 gloss unit (Gu) to 10 Gu, and a maximum height of a plurality of irregularities disposed on the surface in a range between 0.1 m to 2.3 m, and a maximum depth of valleys between the plurality of irregularities in a range between 0.1 m to 1.8 m, and a number of the plurality of irregularities per unit area of 1 cm.sup.2 in a range between 90 to 200.