The present disclosure relates to a silicon etchant composition comprising (A) an alkaline compound, (B) a metal salt, and (C) water, a pattern formation method and a manufacturing method of an array substrate using the silicon etchant composition, and an array substrate manufactured therefrom.

The present disclosure relates to a silicon etchant composition comprising (A) an alkaline compound, (B) a metal salt, and (C) water, a pattern formation method and a manufacturing method of an array substrate using the silicon etchant composition, and an array substrate manufactured therefrom.

A method for processing glass is provided. The method includes the steps of providing a glass element and removing glass material from the glass element by etching with an alkaline etching medium in an organic solvent.

A method for processing glass is provided. The method includes the steps of providing a glass element and removing glass material from the glass element by etching with an alkaline etching medium in an organic solvent.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing sacrificial light absorbing material (SLAM) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing sacrificial light absorbing material (SLAM) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

A method of forming a treated glass-based article comprises: contacting an aluminosilicate glass-based article with an etchant, the etchant comprising: greater than or equal to 30 wt % and less than or equal to 100 wt % potassium hydroxide; and less than or equal to 10 wt % sodium hydroxide; and wherein a temperature of the etchant is greater than or equal to 130 C. during the contacting.

A method of forming a treated glass-based article comprises: contacting an aluminosilicate glass-based article with an etchant, the etchant comprising: greater than or equal to 30 wt % and less than or equal to 100 wt % potassium hydroxide; and less than or equal to 10 wt % sodium hydroxide; and wherein a temperature of the etchant is greater than or equal to 130 C. during the contacting.

An etching composition including an alkaline compound (A) and a thiol compound (B), wherein the etching composition dissolves silicon.

An etching composition including an alkaline compound (A) and a thiol compound (B), wherein the etching composition dissolves silicon.