Provided are an etchant composition of a titanium layer and a method using the same, which may selectively etch the titanium layer without affecting the quality of other layers during a process of manufacturing a semiconductor and a display device, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.

Provided are an etchant composition of a titanium layer and a method using the same, which may selectively etch the titanium layer without affecting the quality of other layers during a process of manufacturing a semiconductor and a display device, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.

The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10.sup.−3 M in the etching solution, wherein the ionic strength enhancer includes Li.sup.+, Na.sup.+, K.sup.+, Mg.sup.2+, Ca.sup.2+, N(CH.sub.3).sup.+, or N(C.sub.2H.sub.5).sup.4+, a solvent, and an etchant.

A fire-resistant wooden pressure plate is formed by conducting a cold pressing of 2˜10 MPa to the uniformly mixed not less than 50 wt % of a wood-containing powder material and an additive. The additive may include metallic oxide, non-metallic oxide, hydrochloride, sulfate, phosphate, weak acid, and strong acid. With class-A fire resistance, in-water rotting resistance, class-0 mold resistance, little or no detectable formaldehyde, some products described herein can replace traditional plates incapable of resisting fire in the following fields: 1. wooden veneer, wooden door, furniture, kitchenware, etc.; 2. wooden wall, base course, ground foundation, suspended ceiling, etc.; 3. wooden flooring; 4. wooden fire-resistant door, fire-resistant wall, etc.; 5. wooden house, wooden bench, wooden bulletin plate, wooden billboard, walkway paving, etc.; 6. wood handicrafts, toys, etc.

Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.

The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.

The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.

A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

A method for preparing a coplanar waveguide structure includes acquiring a structure to be etched, the structure to be etched including an aluminum film provided on a substrate structure and a photoresist structure provided at an upper end of the aluminum film, wherein the photoresist structure is configured to cover partial areas of the aluminum film; performing a first etching operation on the aluminum film provided on the substrate structure by using an acidic solution to obtain a first etched structure; rinsing the first etched structure to obtain an intermediate structure; performing a second etching operation on the intermediate structure by using an alkaline solution to obtain a second etched structure; and rinsing the second etched structure to obtain a target structure for generating a coplanar waveguide structure, the target structure including the aluminum film and the photoresist structure, wherein the photoresist structure covers all areas of the aluminum film.

A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.