A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.

Provided is a chemical mechanical polishing process. The process includes the following steps: a layer to be polished is provided, wherein the layer to be polished has a hole, a trench and/or an opening formed therein, and a protrusion is formed at the corner of the top of the hole, the trench and/or the opening; a polishing pad with a plurality of fibers on the surface thereof is provided; and in a moving direction perpendicular to the top surface of the layer to be polished, the plurality of fibers of the polishing pad are intermittently contacted with the protrusion in the presence of an abrasive-free slurry.

Provided is a chemical mechanical polishing process. The process includes the following steps: a layer to be polished is provided, wherein the layer to be polished has a hole, a trench and/or an opening formed therein, and a protrusion is formed at the corner of the top of the hole, the trench and/or the opening; a polishing pad with a plurality of fibers on the surface thereof is provided; and in a moving direction perpendicular to the top surface of the layer to be polished, the plurality of fibers of the polishing pad are intermittently contacted with the protrusion in the presence of an abrasive-free slurry.

Provided is a chemical mechanical polishing process. The process includes the following steps: a layer to be polished is provided, wherein the layer to be polished has a hole, a trench and/or an opening formed therein, and a protrusion is formed at the corner of the top of the hole, the trench and/or the opening; a polishing pad with a plurality of fibers on the surface thereof is provided; and in a moving direction perpendicular to the top surface of the layer to be polished, the plurality of fibers of the polishing pad are intermittently contacted with the protrusion in the presence of an abrasive-free slurry.

Provided is a chemical mechanical polishing process. The process includes the following steps: a layer to be polished is provided, wherein the layer to be polished has a hole, a trench and/or an opening formed therein, and a protrusion is formed at the corner of the top of the hole, the trench and/or the opening; a polishing pad with a plurality of fibers on the surface thereof is provided; and in a moving direction perpendicular to the top surface of the layer to be polished, the plurality of fibers of the polishing pad are intermittently contacted with the protrusion in the presence of an abrasive-free slurry.

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.

Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.