Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

A processing method for a color film substrate, the color film substrate comprising a substrate, a photoresist layer, a conductive layer and a spacer layer. The photoresist layer is disposed on the substrate; the conductive layer is disposed on the photoresist layer and completely covers the photoresist layer; and the spacer layer is disposed on the conductive layer. The method comprises: detecting the spacer layer; determining whether the spacer layer meets a preset condition; if the spacer layer meets the preset condition, removing the spacer layer using a rework liquid medicine so as to expose the conductive layer; and re-preparing a spacer layer on the exposed conductive layer, wherein the etching selection ratio of the spacer layer to the conductive layer is greater than 1.

Methods of etching an inorganic layer on a glass substrate are described, the methods comprising contacting the glass substrate including an inorganic layer with an etching solution comprising a polar organic solvent and an etchant, wherein the inorganic layer is removed at an inorganic layer etching rate and the glass substrate is etched as a glass etching rate.

The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.

The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45 angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45 angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.