The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

A facility 300 for separation of layers in a multilayer system 310. The facility 300 comprises one or more baths 320a, 320b for accepting the multilayer system 310 and a dispenser 330 for providing a separation fluid 340. The separation fluid 340 comprises a nanoscale dispersion for washing the multilayer system in the baths 320a, 320b and is described in more details below. The facility 300 also includes a filtration device 350 for filtering separated undissolved components of the multilayer system 310.

A facility 300 for separation of layers in a multilayer system 310. The facility 300 comprises one or more baths 320a, 320b for accepting the multilayer system 310 and a dispenser 330 for providing a separation fluid 340. The separation fluid 340 comprises a nanoscale dispersion for washing the multilayer system in the baths 320a, 320b and is described in more details below. The facility 300 also includes a filtration device 350 for filtering separated undissolved components of the multilayer system 310.

Provided is a surface protectant that suppresses corrosion of a semiconductor wafer surface by a basic compound, and reduces defects in the semiconductor wafer.

The semiconductor wafer surface protectant of the present invention includes a compound represented by Formula (1) below;

R.sup.1O(C.sub.3H.sub.6O.sub.2).sub.nH(1) where R.sup.1 denotes a hydrogen atom, a hydrocarbon group that has from 1 to 24 carbon atoms and may have a hydroxyl group, or a group represented by R.sup.2CO, where the R.sup.2 denotes a hydrocarbon group having from 1 to 24 carbon atoms; and n indicates an average degree of polymerization of a glycerin unit shown in the parentheses, and is from 2 to 60.

A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.

A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.