A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)
H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

The present invention relates to an etching composition and a method of producing a MXene. The etching composition of the present invention can stably and quickly produce a MXene at high temperature. The etching composition of the present invention can produce a MXene in high yield. The etching composition of the present invention can easily produce various types of MXenes. A method using the etching composition of the present invention can produce a MXene having excellent electrochemical and mechanical properties.

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)
H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).

A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)
H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).

A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.