C11D1/008

CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE

A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

SULFURIC-ACID-(SALT)-ESTER-GROUP-CONTAINING COPOLYMER AND METHOD FOR PRODUCING SAME
20200031967 · 2020-01-30 ·

The invention aims to provide a polymer that can exhibit excellent calcium phosphate scale inhibition performance. The invention relates to a sulfuric acid (salt) ester group-containing copolymer containing a structural unit (a) derived from a sulfuric acid (salt) ester group-containing monomer (A) represented by the formula (1) and a structural unit (b) derived from an unsaturated carboxylic acid monomer (B).

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RINSE AID FORMULATION FOR CLEANING AUTOMOTIVE PARTS
20200032164 · 2020-01-30 ·

Hard surface rinse aid compositions incorporating surfactant systems compatible with plastics and plastics containing metals, such as aluminum, are disclosed. The hard surface rinse aid compositions are particularly well suited for use in high concentrations at low temperatures without causing foaming and/or debris or film on the treated surface. In particular, the plastic and aluminum-compatible hard surface rinse aid compositions containing a surfactant system combining nonionic alcohol alkoxylates and a polymer surfactant can be used in treating hard surfaces requiring good sheeting, wetting and drying properties. The methods are particularly well suited for rinsing automotive parts, including those needing painting.

COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD USING COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished.

A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, and an amino group, and water, in which pH is less than 7, and the polymer compound has a pKa of 3 or less and an ionic functional group density of more than 10%.

COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD USING COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

An object of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished.

A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, a carboxylic acid (salt) group, and an amino group, and water, wherein the pH value is less than 7, and the polymer compound has a pKa of 3 or less, and a weight average molecular weight of 3,500 or more and 100,000 or less.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SUBSTRATE
20200020522 · 2020-01-16 ·

In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.

Cleaning compositions and methods of use thereof

The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.

DETERGENT COMPOSITIONS COMPRISING ULTRA-LOW MOLECULAR WEIGHT POLYSACCHARIDES

Detergent compositions are provided that include a polysaccharide selected from a carboxymethyl cellulose component, an anionic cellulose derivative, or mixtures thereof and a surfactant system, wherein the polysaccharide has a molecular weight of no greater than from about 1,000 Dalton to 80,000 Dalton.

COMPOSITIONS COMPRISING CELLULASE WITH QUATERNARY AMMONIUM COMPOUNDS
20190382688 · 2019-12-19 ·

The disclosure is directed to cleaning compositions, methods of making the cleaning compositions, and methods of using the cleaning compositions. The cleaning compositions comprise an enzyme composition, a nonionic surfactant having an HLB between 10 and 22, and a quaternary amine. Preferably, the enzyme compositions included in the cleaning compositions comprise a cellulase, an AA9 polypeptide having cellulolytic enhancing activity, a hemicellulase, an esterase, an expansin, a laccase, a ligninolytic enzyme, a pectinase, a peroxidase, a protease, a swollenin, or a combination or mixture thereof. The compositions are useful for degradation of bacterial cellulose.