The invention relates to a degreasing mixture for removing grease, oils, or similar hydrophobic components from a surface of a substrate. The degreasing mixture contains a solvent-free silicate mixture as the main component. The silicate mixture contains granules of phyllosilicate and granules of tectosilicate. Up to 90% by mass of the granules contained in the silicate mixture has a particle size of less than 60 m, and the maximum particle size of the granules of phyllosilicate is smaller than the maximum particle size of the granules of tectosilicate.

A system for cleaning and disinfecting a hard surface includes housing having a base and a front cover panel, an atomizer nozzle, a fluid reservoir housed within the base, and a volume of fluid contained in the fluid reservoir. The fluid may contain colloidal silver. The base of the housing may include a convex rear shell and a first flat face. The front cover panel may include a convex front shell and a complimentary second flat face. The second flat face of the front cover panel may be slidably affixed to first flat face of the base. The front cover panel may be configured to slide, relative to the base, from a first position to a second position, thereby activating the atomizer nozzle and spraying fine liquid droplets containing silver onto the hard surface. At least some bacteria on the hard surface may be killed via the silver.

An object of the present invention is to provide a method for manufacturing a semiconductor, including a step of removing a photoresist present on a patterned wafer substrate and having a hardened modified layer, which is difficult to remove, formed on at least part of a top portion easily and effectively under mild conditions, and a method for cleaning a wafer substrate, including the above step. The method for manufacturing a semiconductor of the present invention as a means for resolution is characterized by comprising a step of bringing a patterned wafer substrate, on which a photoresist having a hardened modified layer formed on at least part of a top portion is present, into contact with a carbon dioxide dissolved water containing ozone-containing microbubbles, thereby removing the photoresist. In addition, the method for cleaning a wafer substrate of the present invention is characterized by comprising the above step.

Compositions, method, and devices are provided for cleaning surfaces, including glass and plastic surfaces. The compositions include white carbon black. The white carbon black can be combined with a binder to form a white carbon black formulation. The white carbon black formulation can be used to clean various glass and plastic surfaces, including transparent surfaces.

Compositions, method, and devices are provided for cleaning surfaces, including glass and plastic surfaces. The compositions include white carbon black. The white carbon black can be combined with a binder to form a white carbon black formulation. The white carbon black formulation can be used to clean various glass and plastic surfaces, including transparent surfaces.

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

This invention relates to compositions, methods and systems having utility in numerous applications, and in particular, uses for compositions containing the compound cis-1,1,1,4,4,4-hexafluoro-2-butene (Z-HFO-1336mzzm), which has the following structure:

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Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

A cleaning composition includes an alcohol solvent and alloy particles. A content of the alloy particles is greater than 0 and 1 ppb or less based on a total weight of the composition. The alloy particles suppress the generation of impurities such as aldehyde and ketone, thereby reducing an occurrence of defects in manufacturing processes of semiconductor and display and improving yields.