To clean components in semiconductor manufacturing equipment, such as an optical system or an electron beam system, a component is heated in a chamber. A supercritical fluid formulation is applied to the component in the chamber, which removes molecular and/or particulate contaminants. The supercritical fluid formulation can include one or more of carbon dioxide, water, HCF, alkane, alkene, nitrous oxide, methanol, ethanol, or acetone.

This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.

Disclosed are compositions comprising 90 to 99 weight percent trans-1,2-dichloroethylene, from 0.1 to 8 weight percent methylperfluoroheptene ethers and from 0.5 to 2.0 weight percent of a fluorocarbon selected from the group consisting of Z-1,1,1,4,4,4-hexafluoro-2-butene, 1,3,4,4,4-pentafluoro-3-trifluoromethy-1-butene, 1,1,1,4,4,5,5,5-octafluoro-2-pentene, perfluorobutyl methyl ether, perflurobutyl ethyl ether, perfluoroisopropylmethyl ether, perfluoroethyl isopropyl ketone, heptafluorocyclopentane, and E-1,1,1-trifluoro-3-chloro-2-propene, wherein the composition is non-flamable. The disclosure further provides a method for removing residue from a surface of an article comprising: (a) contacting the article with a composition comprising a composition of MPHE, trans-1,2-dichloroethylene and a fluorocarbon selected from the group consisting of Z-1,1,1,4,4,4-hexafluoro-2-butene, 1,3,4,4,4-pentafluoro-3-trifluoromethy-1-butene, 1,1,1,4,4,5,5,5-octafluoro-2-pentene, perfluorobutyl methyl ether, perflurobutyl ethyl ether, perfluoroisopropylmethyl ether, perfluoroethyl isopropyl ketone, heptafluorocyclopentane, and E-1,1,1-trifluoro-3-chloro-2-propene; and (b) recovering the surface from the composition.

The present application provides stabilized compositions (e.g., stabilized heat transfer fluids) comprising methyl perfluoroheptene for use, for example, in refrigeration and heat transfer applications. The stabilized compositions of the present invention are useful in methods for producing cooling and heating, methods for replacing refrigerants and refrigeration, air conditioning, heat pump apparatuses, and as solvents or dewatering agents.

The invention relates to an aqueous stripping composition for the removal of polymeric surface sealants on metal surfaces, said stripping composition comprising an alkalizing agent, a polymer splitting agent, a swelling agent, and a cloud point booster, wherein said polymer splitting agent is at least one gluconate wherein said swelling agent is at least one compound selected from the group consisting of glycol ethers and aliphatic alcohols having 3 to 9 carbon atoms. The inventive aqueous stripping composition is capable to remove polymeric sealants like e.g. polyurethane sealants, polyethylene sealants, polyethylene waxes, polyacrylic sealants, polysilicate sealants, and the like.

The invention provides a composition comprising 1,1-difluoroethene (R-1132a); a second component selected from the group consisting of hexafluoroethane (R-116), ethane (R-170) and mixtures thereof; and, optionally carbon dioxide (CO.sub.2, R-744).

The invention provides a composition comprising 1,1-difluoroethene (R-1132a); a second component selected from the group consisting of hexafluoroethane (R-116), ethane (R-170) and mixtures thereof; and, optionally carbon dioxide (CO.sub.2, R-744).

There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A metal resist remover containing a solvent and a sulfuric acid, in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.