The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom % and 5.0 atom % or less, Pd in a range of more than 0.10 atom % and 2.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom % or more of Au, and a total content of Au and Pd may be set to 5.00 atom % or less. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

An Ag alloy sputtering target includes Mg in a range of more than 1.0 atom % and 5.0 atom % or less, Pd in a range of more than 0.10 atom % and 2.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include 0.10 atom % or more of Au, and a total content of Au and Pd may be set to 5.00 atom % or less. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

An Ag alloy sputtering target includes Mg in a range of 1.0 atom % or more and 5.0 atom % or less, Au in a range of 0.10 atom % or more and 5.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

An Ag alloy sputtering target includes Mg in a range of 1.0 atom % or more and 5.0 atom % or less, Au in a range of 0.10 atom % or more and 5.00 atom % or less, and a balance consisting of Ag and inevitable impurities. The Ag alloy sputtering target may further include Ca in a range of 0.01 atom % or more and 0.15 atom % or less. In addition, the oxygen content may be 0.010% by mass or less.

Aqueous acid binary silver-bismuth alloy electroplating compositions and methods enable electroplating silver rich binary silver-bismuth deposits. The aqueous acid binary silver-bismuth alloy electroplating compositions include 5-membered heterocyclic nitrogen compounds with a thiol functionality which enable deposition of the silver rich binary silver-bismuth alloys. The silver rich silver-bismuth deposits are matte to semi-bright, uniform and have a low coefficient of friction.

Aqueous acid binary silver-bismuth alloy electroplating compositions and methods enable electroplating silver rich binary silver-bismuth deposits. The aqueous acid binary silver-bismuth alloy electroplating compositions include 5-membered heterocyclic nitrogen compounds with a thiol functionality which enable deposition of the silver rich binary silver-bismuth alloys. The silver rich silver-bismuth deposits are matte to semi-bright, uniform and have a low coefficient of friction.