Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

A formed body of Cu—Al—Mn-based shape-memory alloy may include a screw portion, wherein the screw portion is a form-rolled portion. A method for producing a formed body of Cu—Al—Mn-based shape-memory alloy may involve forming a screw portion having superelasticity by plastically working at least a portion of a material for the formed body with form-rolling in a state that a crystal structure is an A2-type structure and then, subjecting heat-treatment so as to convert the A2-type crystal structure into an L.sub.21-type crystal structure. The screw portion can be formed with good working property, and has excellent fatigue resistance and breaking resistance.

A formed body of Cu—Al—Mn-based shape-memory alloy may include a screw portion, wherein the screw portion is a form-rolled portion. A method for producing a formed body of Cu—Al—Mn-based shape-memory alloy may involve forming a screw portion having superelasticity by plastically working at least a portion of a material for the formed body with form-rolling in a state that a crystal structure is an A2-type structure and then, subjecting heat-treatment so as to convert the A2-type crystal structure into an L.sub.21-type crystal structure. The screw portion can be formed with good working property, and has excellent fatigue resistance and breaking resistance.

The disclosure relates to a Cu-based microcrystal alloy and a preparation method thereof. Through being measured in percentage by mass, the Cu-based microcrystal alloy provided by the disclosure includes 20 to 30 percent of Mn, 0.01 to 10 percent of Al, 5 to 10 percent of Ni, 0.3 to 1.5 percent of Ti, 0 to 1.5 percent of Zr, 0.05 to 2 percent of Si and 45 to 74.64 percent of Cu.

The disclosure relates to a Cu-based microcrystal alloy and a preparation method thereof. Through being measured in percentage by mass, the Cu-based microcrystal alloy provided by the disclosure includes 20 to 30 percent of Mn, 0.01 to 10 percent of Al, 5 to 10 percent of Ni, 0.3 to 1.5 percent of Ti, 0 to 1.5 percent of Zr, 0.05 to 2 percent of Si and 45 to 74.64 percent of Cu.

Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ.Math.m.