Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ.Math.m.

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10.sup.−6/K at 100° C. with reference to 25° C.

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10.sup.−6/K at 100° C. with reference to 25° C.

Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur (S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.

Provided is a low carbon defect copper-manganese (CuMn) sputtering target and systems and methods for producing the same. The low carbon defect CuMn sputtering target may comprise of copper with a purity of at least about 99.9999%, manganese with a purity of about 99.9% to about 99.999%, and one or more active elements comprising of oxygen (O) at about 100 parts per million (ppm) to about 4000 ppm, iron (Fe) at about 5 parts per billion (ppb) to about 100 ppm, sulfur (S) at about 5 ppm to about 400 ppm, hydrogen (H) at about 1 ppm to about 10 ppm, and chromium (Cr) at about 5 ppb to about 200 ppm, wherein the manganese has a compositional range of up to about 5 wt %.

A method of casting an article includes forming a melt comprising copper, introducing manganese into the melt to produce a copper-manganese alloy, and casting the copper-manganese alloy in a mold to form the article. The carbon and oxygen contents of the copper-manganese alloy are controlled in order to control the formation of graphite, manganese carbide, and/or manganese oxide particles within the article. Copper-manganese alloys containing carbon are also provided, as well as articles made therefrom in cast or wrought form.

A method of casting an article includes forming a melt comprising copper, introducing manganese into the melt to produce a copper-manganese alloy, and casting the copper-manganese alloy in a mold to form the article. The carbon and oxygen contents of the copper-manganese alloy are controlled in order to control the formation of graphite, manganese carbide, and/or manganese oxide particles within the article. Copper-manganese alloys containing carbon are also provided, as well as articles made therefrom in cast or wrought form.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

A bonding member that includes a resin body defining an airtight interior, and a bonding material enclosed in the interior of the resin body. The bonding material is a mixed powder that includes a plurality of particles of a first metal powder and a plurality of particles of a second metal powder. The second metal powder reacts with the first metal powder when melted to thereby produce an intermetallic compound. The resin body has a melting point higher than a softening point of the mixed powder.