Patent classifications
C22C2026/006
METHODS OF FORMING CUTTING ELEMENTS, AND RELATED EARTH-BORING TOOLS
A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.
CUTTING ELEMENTS, AND RELATED EARTH-BORING TOOLS, SUPPORTING SUBSTRATES, AND METHODS
A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.
WELDING METHOD USING COATED ABRASIVE PARTICLES, COATED ABRASIVE PARTICLES, COATING SYSTEM AND SEALING SYSTEM
A welding method using coated abrasive particles, coated abrasive particles, coating system and sealing system which uses particles, in which a hard material layer is applied around abrasive particles such as cubic boron nitride (cBN) and protects against oxidation during welding. The hard material compound in the coating may include a carbide, in particular titanium carbide. A sealing system is composed of stator and rotor blade having the layer system.
WELDING METHOD USING COATED ABRASIVE PARTICLES, COATED ABRASIVE PARTICLES, COATING SYSTEM AND SEALING SYSTEM
A welding method using coated abrasive particles, coated abrasive particles, coating system and sealing system which uses particles, in which a hard material layer is applied around abrasive particles such as cubic boron nitride (cBN) and protects against oxidation during welding. The hard material compound in the coating may include a carbide, in particular titanium carbide. A sealing system is composed of stator and rotor blade having the layer system.
CUBIC BORON NITRIDE SINTERED MATERIAL
A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.
CUBIC BORON NITRIDE SINTERED MATERIAL
A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.
POLYCRYSTALLINE DIAMOND STRUCTURE
A polycrystalline diamond structure comprises a first region and a second region adjacent the first region, the second region being bonded to the first region by intergrowth of diamond grains. The first region comprises a plurality of alternating strata or layers, each or one or more strata or layers in the first region having a thickness in the range of around 5 to 300 microns. The polycrystalline diamond (PCD) structure has a diamond content of at most about 95 percent of the volume of the PCD material, a binder content of at least about 5 percent of the volume of the PCD material, and one or more of the layers or strata in the first region comprise and/or the second region comprises diamond grains having a mean diamond grain contiguity of greater than about 60 percent and a standard deviation of less than about 2.2 percent. There is also disclosed a method of making such a polycrystalline diamond structure.
ALUMINUM-BASED COMPOSITE MATERIAL AND METHOD FOR PRODUCING THE SAME
An aluminum-based composite material includes a plurality of coarse crystalline grains (3) of pure aluminum, and a plurality of fine crystalline grains (4) each having an aluminum matrix (1), and a dispersion material (2) dispersed inside the aluminum matrix and formed by reacting a portion or all of an additive with aluminum in the aluminum matrix. The fine crystalline grains exist among the coarse crystalline grains, and the fine crystalline grains have crystalline grain diameters smaller than crystalline grain diameters of the coarse crystalline grains.
CEMENTED CARBIDE MATERIAL AND METHOD OF MAKING SAME
A cemented carbide material comprises WC, between around 3 to around 10 wt. % Co and between around 0.5 to around 8 wt. % Re. The equivalent total carbon (ETC) content of the cemented carbide material with respect to WC is between around 6.3 wt. % to around 6.9 wt. % and the cemented carbide material is substantially free of eta-phase and free carbon. There is also disclosed a method of producing such a material and use of such a material.
POLYCRYSTALLINE DIAMOND ELEMENTS AND SYSTEMS AND METHODS FOR FABRICATING THE SAME
Polycrystalline diamond may include a working surface and a peripheral surface extending around an outer periphery of the working surface. The polycrystalline diamond includes a first volume including an interstitial material and a second volume having a leached region that includes boron and titanium. A method of fabricating a polycrystalline diamond element may include positioning a first volume of diamond particles adjacent to a substrate, the first volume of diamond particles including a material that includes a group 13 element, and positioning a second volume of diamond particles adjacent to the first volume of diamond particles such that the first volume of diamond particles is disposed between the second volume of diamond particles and the substrate, the second volume of diamond particles having a lower concentration of material including the group 13 element than the first volume of diamond particles.