In various embodiments, wire composed at least partially of arc-melted refractory metal material is utilized to fabricate three-dimensional parts by additive manufacturing.

A preparation method for a W—Cu composite plate with a Cu phase in finger-shaped gradient distribution is provided. The method includes adding WO.sub.X powder obtained with ammonium metatungstate as a raw material into W powder through a combustion synthesis method, adding a binder and a pore-forming agent to prepare a slurry, then performing tape casting, soaking in water and sintering to obtain a W framework with pores in finger-shaped distribution, and then infiltrating Cu to obtain a target product. The Cu phase in the W—Cu composite material prepared by the present method is distributed in a finger-shaped gradient manner from an infiltration surface to the interior of a specimen, the Cu phase and the W phase are mutually pinned, and the W—Cu interface has good bonding strength. The present method has the characteristics of adjustable material component performance, simple process, low cost, suitability for large-scale production and the like.

A preparation method for a W—Cu composite plate with a Cu phase in finger-shaped gradient distribution is provided. The method includes adding WO.sub.X powder obtained with ammonium metatungstate as a raw material into W powder through a combustion synthesis method, adding a binder and a pore-forming agent to prepare a slurry, then performing tape casting, soaking in water and sintering to obtain a W framework with pores in finger-shaped distribution, and then infiltrating Cu to obtain a target product. The Cu phase in the W—Cu composite material prepared by the present method is distributed in a finger-shaped gradient manner from an infiltration surface to the interior of a specimen, the Cu phase and the W phase are mutually pinned, and the W—Cu interface has good bonding strength. The present method has the characteristics of adjustable material component performance, simple process, low cost, suitability for large-scale production and the like.

Nanocrystalline alloy penetrators and related methods are generally provided. In some embodiments, a munition comprises a nanocrystalline alloy penetrator. In certain embodiments, the nanocrystalline alloy has particular properties (e.g., grain size, grain isotropy, mechanical properties) such that the penetrator acts as a rigid body kinetic penetrator.

Nanocrystalline alloy penetrators and related methods are generally provided. In some embodiments, a munition comprises a nanocrystalline alloy penetrator. In certain embodiments, the nanocrystalline alloy has particular properties (e.g., grain size, grain isotropy, mechanical properties) such that the penetrator acts as a rigid body kinetic penetrator.

Provided is a heat sink that has a clad structure of a Cu—Mo composite material and a Cu material and has a low coefficient of thermal expansion and high thermal conductivity. A heat sink comprises three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that two of the Cu layers are outermost layers on both sides, wherein each of the Cu—Mo composite layers has a thickness section microstructure in which flat Mo phase is dispersed in a Cu matrix. The heat sink has a low coefficient of thermal expansion and also has high thermal conductivity in the thickness direction because the thickness of each of the Cu layers which are the outermost layers is reduced, as compared with a heat sink of a three-layer clad structure having the same thickness and density.

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. In different aspects, an enthalpy of mixing of the binary alloy may be calculated as a first thermodynamic parameter, and an enthalpy of segregation of the binary alloy may be calculated as a second thermodynamic parameter. In another example, a diagram delineating a plurality of regions respectively representing different stable phases of at least one binary alloy is employed, wherein respective regions of the plurality of regions are delineated by at least one boundary determined as a function of at least two thermodynamic parameters associated with grain growth and phase separation of the at least one binary alloy.

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. In different aspects, an enthalpy of mixing of the binary alloy may be calculated as a first thermodynamic parameter, and an enthalpy of segregation of the binary alloy may be calculated as a second thermodynamic parameter. In another example, a diagram delineating a plurality of regions respectively representing different stable phases of at least one binary alloy is employed, wherein respective regions of the plurality of regions are delineated by at least one boundary determined as a function of at least two thermodynamic parameters associated with grain growth and phase separation of the at least one binary alloy.

The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.