A method of manufacturing polycrystalline abrasive elements consisting of micron, sub-micron or nano-sized ultrahard abrasives dispersed in micron, sub-micron or nano-sized matrix materials. A plurality of ultrahard abrasive particles having vitreophilic surfaces are coated with a matrix precursor material in a refined colloidal process and then treated to render them suitable for sintering. The matrix precursor material can be converted to an oxide, nitride, carbide, oxynitride, oxycarbide, or carbonitride, or an elemental form thereof. The coated ultrahard abrasive particles are consolidated and sintered at a pressure and temperature at which they are crystallographically or thermodynamically stable.

A method of manufacturing polycrystalline abrasive elements consisting of micron, sub-micron or nano-sized ultrahard abrasives dispersed in micron, sub-micron or nano-sized matrix materials. A plurality of ultrahard abrasive particles having vitreophilic surfaces are coated with a matrix precursor material in a refined colloidal process and then treated to render them suitable for sintering. The matrix precursor material can be converted to an oxide, nitride, carbide, oxynitride, oxycarbide, or carbonitride, or an elemental form thereof. The coated ultrahard abrasive particles are consolidated and sintered at a pressure and temperature at which they are crystallographically or thermodynamically stable.

The present disclosure provides a surge protection device including a ceramic substrate (1), at least one pair of discharge electrodes (31) disposed on a surface of the ceramic substrate (1) so as to face each other at end portions thereof with a space in between, outer electrodes (32) electrically connected to the corresponding discharge electrodes (31), and a discharge auxiliary electrode (4) disposed between the end portions of the pair of discharge electrodes (31) The discharge auxiliary electrode (4) contains crystalized glass and particles of conductive powder (40) dispersed apart from each other in the crystalized glass.

The present disclosure provides a surge protection device including a ceramic substrate (1), at least one pair of discharge electrodes (31) disposed on a surface of the ceramic substrate (1) so as to face each other at end portions thereof with a space in between, outer electrodes (32) electrically connected to the corresponding discharge electrodes (31), and a discharge auxiliary electrode (4) disposed between the end portions of the pair of discharge electrodes (31) The discharge auxiliary electrode (4) contains crystalized glass and particles of conductive powder (40) dispersed apart from each other in the crystalized glass.

A hermetically sealed filtered feedthrough assembly attachable to an AIMD includes an insulator hermetically sealing a ferrule opening of an electrically conductive ferrule with a gold braze. A co-fired and electrically conductive sintered paste is disposed within and hermetically seals at least one via hole extending in the insulator. At least one capacitor is disposed on the device side. An active electrical connection electrically connects a capacitor active metallization and the sintered paste. A ground electrical connection electrically connects the gold braze to a capacitor ground metallization, wherein at least a portion of the ground electrical connection physically contacts the gold braze. The dielectric of the capacitor may be less than 1000 k. The ferrule may include an integrally formed peninsula portion extending into the ferrule opening spatially aligned with a ground passageway and metallization of an internally grounded feedthrough capacitor. The sintered paste may be of substantially pure platinum.

A hermetically sealed filtered feedthrough assembly attachable to an AIMD includes an insulator hermetically sealing a ferrule opening of an electrically conductive ferrule with a gold braze. A co-fired and electrically conductive sintered paste is disposed within and hermetically seals at least one via hole extending in the insulator. At least one capacitor is disposed on the device side. An active electrical connection electrically connects a capacitor active metallization and the sintered paste. A ground electrical connection electrically connects the gold braze to a capacitor ground metallization, wherein at least a portion of the ground electrical connection physically contacts the gold braze. The dielectric of the capacitor may be less than 1000 k. The ferrule may include an integrally formed peninsula portion extending into the ferrule opening spatially aligned with a ground passageway and metallization of an internally grounded feedthrough capacitor. The sintered paste may be of substantially pure platinum.

A (GaMe).sub.2O.sub.3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention is formed by solid solution of Ga.sub.2O.sub.3 and Me.sub.2O.sub.3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me.sub.2O.sub.3 is higher than that of Ga.sub.2O.sub.3, and Ga.sup.3+ ions in Ga.sub.2O.sub.3 are partially replaced by Me.sup.3+ ions to obtain a higher band gap (GaMe).sub.2O.sub.3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.

A (GaMe).sub.2O.sub.3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention is formed by solid solution of Ga.sub.2O.sub.3 and Me.sub.2O.sub.3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me.sub.2O.sub.3 is higher than that of Ga.sub.2O.sub.3, and Ga.sup.3+ ions in Ga.sub.2O.sub.3 are partially replaced by Me.sup.3+ ions to obtain a higher band gap (GaMe).sub.2O.sub.3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.

The disclosure relates to a phase change thermal storage ceramic having high service temperature and improved utilization rate and utilization efficiency of heat. It is prepared at a low cost with a simple, easy-to-industrially-realized method. A mixture is obtained by mixing and stirring evenly 50-85 wt % of fused mullite powder, 10-45 wt % of pretreated aluminum-silicon alloy powder, and 3-8 wt % of ball clay. A ceramic body is formed by press molding the mixture at 80-150 MPa. The ceramic body is cured at 25-28° C. and a relative humidity of 70-75 RH for 24-36 h, dried at 80-120° C. for 24-36 h, and held at 1,100-1,300° C. for 3-5 h to prepare the phase change thermal storage ceramic. The pretreated aluminum-silicon alloy powder is prepared by holding aluminum-silicon alloy powder in water vapor at 0.02-0.20 MPa for 0.5-3 h to impregnate in an alkaline silica sol and drying the impregnated powder.

A method for manufacturing a singulated feedthrough insulator for a hermetic seal of an active implantable medical device (AIMD) is described. The method begins with forming a green-state ceramic bar with a via hole filled with a conductive paste. The green-state ceramic bar is dried to convert the paste to an electrically conductive material filling via hole and then subjected to a pressing step. Following pressing, a green-state insulator is singulated from the green-state ceramic bar. The singulated green-state insulator in next sintered to form an insulator that is sized and shaped for hermetically sealing to close a ferrule opening. The thusly produced feedthrough is suitable installation in an opening in the housing of an active implantable medical device.