A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an MgZr, MgZnZr, MgAlZnMn, MgZnCuMn or MgW alloy, or a combination thereof, dispersed in the cellular nanomatrix.

A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 m.sup.2 or more is in a range of 1,800/mm.sup.2 or more and 14,000 /mm.sup.2 or less.

A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 m.sup.2 or more is in a range of 1,800/mm.sup.2 or more and 14,000 /mm.sup.2 or less.

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by SiSnTi and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi.sub.2, wherein when a peak intensity of a SiO bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a SiSi bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)>S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

A negative electrode active material including a silicon-containing alloy having a ternary alloy composition expressed by SiSnTi and including a structure in which an a-Si phase containing amorphous or low-crystalline silicon formed by dissolving tin in a crystal structure of silicon is dispersed in a parent phase of a silicide phase including TiSi.sub.2, wherein when a peak intensity of a SiO bond peak that is observed at a position where an interatomic distance in a radial wave function observed by XAFS is 0.13 nm is S(1) and a peak intensity of a SiSi bond peak that is observed at a position where the interatomic distance is 0.2 nm is S(2), a relation of S(2)>S(1) is satisfied is used for an electrical device. When used, the negative electrode active material achieves both cycle durability and charging-discharging efficiency for an electrical device such as a lithium ion secondary battery.

The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): Si.sub.xSn.sub.yM.sub.zA.sub.a (in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): Si.sub.xSn.sub.yM.sub.zA.sub.a (in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0<x<100, 0<y<100, 0<z<100, 0a<0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

The present invention relates to the composition and production of an engineered degradable metal matrix composite that is useful in constructing temporary systems requiring wear resistance, high hardness, and/or high resistance to deformation in water-bearing applications such as, but not limited to, oil and gas completion operations.

The present invention relates to the composition and production of an engineered degradable metal matrix composite that is useful in constructing temporary systems requiring wear resistance, high hardness, and/or high resistance to deformation in water-bearing applications such as, but not limited to, oil and gas completion operations.

The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.