A low-melting-point alloy composite material and a composite material structure are provided. The low-melting-point alloy composite material includes 48 to 54 wt. % In, 30 to 36 wt. % Bi, 14 to 21 wt. % Sn, and at least one selected from 0.1 to 0.3 wt. % carbon material and 0.05 to 0.1 wt. % boron nitride (BN). The composite material structure includes a metal layer, a low-melting-point alloy composite material layer, and an interface material layer, wherein the material of the low-melting-point alloy composite material layer is the above low-melting-point alloy composite material, and the interface material layer is formed between the metal layer and the low-melting-point alloy composite material layers.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

An electrical assembly includes an electrical connector soldered to a conductive pad disposed on a glass surface by a solder alloy consisting essentially of 17% to 28% indium by weight, 12% to 20% zinc by weight, 1% to 6% silver by weight, 1% to 3% copper by weight, and a remaining weight of the solder alloy being tin.

An electrical assembly includes an electrical connector soldered to a conductive pad disposed on a glass surface by a solder alloy consisting essentially of 17% to 28% indium by weight, 12% to 20% zinc by weight, 1% to 6% silver by weight, 1% to 3% copper by weight, and a remaining weight of the solder alloy being tin.

A high strength and low modulus alloy is disclosed, and comprises at least five principal elements and at least one additive element. The principal elements are Ti, Zr, Nb, Mo, and Sn, and the additive element(s) are V, W, Cr, and/or Hf. Particularly, a summation of numeric values of Ti and Zr in atomic percent is less than or equal to 85, and the additive elements have a total numeric value in atomic percent less than or equal to 4. Experimental data reveal that, samples of the high strength and low modulus alloy all have properties of yield strength greater than 600 MPa and Young's modulus less than 90 GPa. As a result, experimental data have proved that the high strength and low modulus alloy has a significant potential for applications in the manufacture of various industrial components and/or devices, medical devices, and surgical implants.

A high strength and low modulus alloy is disclosed, and comprises at least five principal elements and at least one additive element. The principal elements are Ti, Zr, Nb, Mo, and Sn, and the additive element(s) are V, W, Cr, and/or Hf. Particularly, a summation of numeric values of Ti and Zr in atomic percent is less than or equal to 85, and the additive elements have a total numeric value in atomic percent less than or equal to 4. Experimental data reveal that, samples of the high strength and low modulus alloy all have properties of yield strength greater than 600 MPa and Young's modulus less than 90 GPa. As a result, experimental data have proved that the high strength and low modulus alloy has a significant potential for applications in the manufacture of various industrial components and/or devices, medical devices, and surgical implants.

A hot stamped steel includes a base material, a plated layer that is formed on a surface of the base material, and an oxide film that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; and chemical composition of the oxide film contains 20.0 to 55.0 at % of Mg, 0.5 to 15.0 at % of Ca, 0 to 15.0 at % of Zn, and 0 at % or more and less than 10.0 at % of Al with a remainder of O and a total of 5.0 at % or less of impurities, and the adhesion amount of the oxide film per one surface is in a range of 0.01 to 10 g/m.sup.2.

A hot stamped steel includes a base material, a plated layer that is formed on a surface of the base material, and an oxide film that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; and chemical composition of the oxide film contains 20.0 to 55.0 at % of Mg, 0.5 to 15.0 at % of Ca, 0 to 15.0 at % of Zn, and 0 at % or more and less than 10.0 at % of Al with a remainder of O and a total of 5.0 at % or less of impurities, and the adhesion amount of the oxide film per one surface is in a range of 0.01 to 10 g/m.sup.2.

An electrical connector includes a first layer having a first coefficient of thermal expansion and a second layer overlaying the first layer having a second coefficient of thermal expansion. A first difference between the first coefficient of thermal expansion and a coefficient of thermal expansion of glass is greater than a second difference between the second coefficient of thermal expansion and the coefficient of thermal expansion of glass. The electrical connector further includes a layer of a solder alloy having about 15% to 28% indium by weight, about 5% to 20% zinc by weight, about 1% to 6% silver by weight, and at least 36% tin by weight. The solder layer is disposed on at least a portion of the second layer.