The present invention provides a high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity and a preparation method thereof. The general formula of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity is Zr.sub.xHf.sub.1-xNi.sub.yPd.sub.1-ySn, where x is equal to 0.6 to 0.8, and y is equal to 0.8 to 0.9. The preparation method of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity comprises the following steps: preparing and mixing materials according to the general formula of Zr.sub.0.7Hf.sub.0.3Ni.sub.0.85Pd.sub.0.15Sn, putting the mixed raw materials in a levitation melting for melting, grinding the obtained ingot into powder and drying it, and sintering the powder by using spark plasma sintering into a bulk high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity. The high-entropy Half-Heusler thermoelectric material of the present invention has a relatively low lattice thermal conductivity and a relatively high ZT value.

The present invention provides a high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity and a preparation method thereof. The general formula of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity is Zr.sub.xHf.sub.1-xNi.sub.yPd.sub.1-ySn, where x is equal to 0.6 to 0.8, and y is equal to 0.8 to 0.9. The preparation method of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity comprises the following steps: preparing and mixing materials according to the general formula of Zr.sub.0.7Hf.sub.0.3Ni.sub.0.85Pd.sub.0.15Sn, putting the mixed raw materials in a levitation melting for melting, grinding the obtained ingot into powder and drying it, and sintering the powder by using spark plasma sintering into a bulk high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity. The high-entropy Half-Heusler thermoelectric material of the present invention has a relatively low lattice thermal conductivity and a relatively high ZT value.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

The present invention relates to matter alloys including copper.

The present invention relates to matter alloys including copper.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Provided are a p-type thermoelectric conversion material, a thermoelectric conversion module, and a method of manufacturing a p-type thermoelectric conversion material that are capable of obtaining high thermoelectric conversion characteristics. The p-type thermoelectric conversion material has a full Heusler alloy having a composition represented by the following General Formula (1) and has a relative density of 85% or more, Fe.sub.xTi.sub.yMA.sub.aMB.sub.b . . . (1), wherein in Formula (1), MA is one element selected from the group consisting of Si, Sn, and Ge, MB is one element selected from the group consisting of Al, Ga, and In, and x, y, a, and b are numbers set so that x+y+a+b=100, a+b=z, 50<x52.5, 20y24.5, 24.5z29, a>0, and b>0 in atom %, respectively.

A method for producing a thermoelectric object for a thermoelectric conversion device is provided. A starting material which has elements in the ratio of a half-Heusler alloy is melted and then cooled to form at least one ingot. The ingot is homogenized at a temperature of 1000 C. to 1400 C. for a period of time t, wherein 0.5 ht<12 h or 24 h<t<100 h. The homogenized ingot is crushed and ground into a powder. The powder is cold-pressed and sintered at a maximum pressure of 1 MPa for 0.5 to 24 h at a temperature of 1000 C. to 1500 C.