A silver brazing material containing silver, copper, zinc, manganese, nickel, and tin as indispensable constituent elements. The silver brazing material includes 35 mass % or more and 45 mass % or less silver, 18 mass % or more and 28 mass % or less zinc, 2 mass % or more and 6 mass % or less manganese, 1.5 mass % or more and 6 mass % or less nickel, and 0.5 mass % or more and 5 mass % or less tin, with the balance being copper impurities. Within these compositional ranges, a predetermined relation is set between the manganese content and the nickel content, whereby the silver brazing material can be provided with excellent characteristics also in terms of processability or wettability. In the silver brazing material of the present invention, the silver content is reduced, and also melting point reduction and the narrowing of the temperature difference between solidus temperature and liquidus temperature are attempted.

A plated steel material comprising a steel base material and an Al—Zn—Mg-based plating layer formed on a surface of the steel base material, wherein the plating layer has a predetermined chemical composition, and in a surface structure of the plating layer, there is, by area ratio, 2.0% or more of an acicular Al—Zn—Si—Ca phase.

A plated steel material comprising a steel base material and an Al—Zn—Mg-based plating layer formed on a surface of the steel base material, wherein the plating layer has a predetermined chemical composition, and in a surface structure of the plating layer, there is, by area ratio, 2.0% or more of an acicular Al—Zn—Si—Ca phase.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

A probe pin material including a Ag—Pd—Cu-based alloy essentially including Ag, Pd and Cu, B as a first additive element, and at least any element of Zn, Bi and Sn, as a second additive element. A concentration of the first additive element is 0.1 mass % or more and 1.5 mass % or less, and a concentration of the second additive element is 0.1 mass % or more and 1.0 mass % or less. A Ag concentration, a Pd concentration and a Cu concentration in the Ag—Pd—Cu-based alloy are required as follows: a Ag concentration (S.sub.Ag), a Pd concentration (S.sub.Pd) and a Cu concentration (S.sub.Cu) converted as given that a Ag—Pd—Cu ternary alloy is formed from only such three elements all fall within a predetermined range in a Ag—Pd—Cu ternary system phase diagram. The probe pin material is excellent in resistance value and hardness/wear resistance, and also is enhanced in bending resistance.

The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

An electrical assembly includes an electrical connector soldered to a conductive pad disposed on a glass surface by a solder alloy consisting essentially of 17% to 28% indium by weight, 12% to 20% zinc by weight, 1% to 6% silver by weight, 1% to 3% copper by weight, and a remaining weight of the solder alloy being tin.

An electrical assembly includes an electrical connector soldered to a conductive pad disposed on a glass surface by a solder alloy consisting essentially of 17% to 28% indium by weight, 12% to 20% zinc by weight, 1% to 6% silver by weight, 1% to 3% copper by weight, and a remaining weight of the solder alloy being tin.

A high strength and low modulus alloy is disclosed, and comprises at least five principal elements and at least one additive element. The principal elements are Ti, Zr, Nb, Mo, and Sn, and the additive element(s) are V, W, Cr, and/or Hf. Particularly, a summation of numeric values of Ti and Zr in atomic percent is less than or equal to 85, and the additive elements have a total numeric value in atomic percent less than or equal to 4. Experimental data reveal that, samples of the high strength and low modulus alloy all have properties of yield strength greater than 600 MPa and Young's modulus less than 90 GPa. As a result, experimental data have proved that the high strength and low modulus alloy has a significant potential for applications in the manufacture of various industrial components and/or devices, medical devices, and surgical implants.