A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

The present disclosure relates to coated non-metallic substrates and coated metallic substrates, and methods for producing such coated substrates. A variant of the method is characterized in that a mat or glossy coating is underneath a metallic layer obtained in some cases by way of vapor deposition and/or sputtering. In another variant, the metallic is sufficiently thin so that it remains transparent or translucent to visible light. The coated substrates may include multiple layers such as metallic layers, polysiloxane layers, a color layer, a conversion layer, a primer layer, and/or a transparent or colored layer. An application system for applying a metallic layer to at least one surface of a substrate may include a plasma generator and/or a corona system for treating one or more layers by plasma treatment and/or corona treatment.

To provide a sliding member, such as a piston ring for an internal combustion engine, having low friction and excellent toughness. The above-described problem is solved by a sliding member (10) such as a piston ring coated with a Cr—B—Ti—V—(Mn, Mo)—N-based alloy film (2) on a sliding surface (11) thereof, and configured so that the alloy film (2) contains one or both of Mn and Mo and has a total content of the Mn and the Mo within a range of 2 mass % or less. Preferably, a B content is within a range of 0.1 mass % to 1.5 mass %, inclusive, a V content is within a range of 0.05 mass % to 1 mass %, inclusive, and a Ti content is within a range of 0.05 mass % to 1.5 mass %, inclusive.

A bioactive coated substrate includes a base substrate, a first interlayer disposed over the base substrate, an outermost bioactive layer disposed on the first interlayer, and a topcoat layer disposed on the outermost bioactive layer. Characteristically, a plurality of microscopic openings extending through the topcoat layer and the outermost bioactive layer expose the first interlayer and the outermost bioactive layer. A method for forming the bioactive coated substrate is also provided.

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A multi-layered coating system for a substrate and a method for preparing the multi-layered coating system are provided herein. The multi-layered coating system includes a substrate, a metallic layer disposed adjacent to at least a portion of the substrate, an adhesion layer disposed adjacent to at least a portion of the metallic layer, and a protective coating layer disposed adjacent to at least a portion of the adhesion layer. The metallic layer includes a metal, an oxide of the metal, or a combination thereof. The adhesion layer includes a silicate and latex.

A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.