The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

The present invention provides a method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, in which A represents an organic cation or a mixture of two or more different cations, at least one of which is an organic cation, M represents a divalent metal cation or a mixture of two or more different divalent metal cations, and X represents halide anions which are the same or different, the method comprising the steps of: (i) forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic metal halide perovskite material having a planar, layered two-dimensional crystal structure (ii) reacting the first layer with one or more organic halides to form the crystalline or polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX.sub.3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, wherein the material is obtainable using the above defined method.

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

A method for preparing a modified polypropylene film, the modified polypropylene film comprising a polypropylene film; and, an oxide layer and/or nitride layer, each of which has a thickness of 20-500 nm, on a surface of the polypropylene film; the method comprising: depositing the oxide layer or nitride layer on a surface of the polypropylene film by an Atomic Layer Deposition (ALD) process to obtain the modified polypropylene film; wherein the step of depositing the oxide layer or nitride layer comprises: placing the polypropylene film in an ALD reaction chamber; vacuumizing; heating up; introducing a carrier gas; and, passing at least two precursors into the reaction chamber alternately for reaction, resulting in the modified polypropylene film; wherein the precursors comprise a precursor for providing a metal element or Si, and a precursor for providing an oxygen or nitrogen element.

The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

The present invention relates to a superconductive rare-earth metal oxyhydride material and a method for producing the material. The method comprising the steps of: —first the formation on a substrate of a layer of an oxygen free rare-earth metal hydride with a predetermined thickness using a physical vapor deposition process; and —second exposing the rare-earth metal hydride layer to oxidative agent for oxidation where the oxygen reacts with the rare-earth metal hydride that results with obtaining rare-earth metal oxyhydride, the oxidation being below a predetermined limit defined by a measured transparency being less than 10%.

The present invention relates to a superconductive rare-earth metal oxyhydride material and a method for producing the material. The method comprising the steps of: —first the formation on a substrate of a layer of an oxygen free rare-earth metal hydride with a predetermined thickness using a physical vapor deposition process; and —second exposing the rare-earth metal hydride layer to oxidative agent for oxidation where the oxygen reacts with the rare-earth metal hydride that results with obtaining rare-earth metal oxyhydride, the oxidation being below a predetermined limit defined by a measured transparency being less than 10%.

A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.